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onsemi IGBT 650 V, 75 A, 3-Pin TO-247-3L Surface Mount FGHL75T65LQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65LQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65LQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector emitter voltage of 650 V ensures robust handling of high voltage.
- Maximum power dissipation rating of 469 W supports efficient thermal management.
- Surface mount TO-247-3L package with 3 pins facilitates easy paralleling and integration.
- Wide operating temperature range from -55°C to 175°C allows use in demanding environments.
- Maximum gate emitter voltage of 20 V provides stable gate control.
- Compliant with RoHS standards restricting hazardous substances.
- Low conduction losses and well controllable turnoff overshoot optimize efficiency.
- Ideal for solar inverters, UPS, EV charging stations, and energy storage systems.
Product Description
onsemi FGHL75T65LQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) rated for 650 V and 75 A, featuring a 3-pin TO-247-3L surface mount package. This device is engineered to balance low collector emitter saturation voltage (Vce(sat)) and switching losses (Eoff), providing excellent efficiency for power conversion solutions.
Its robust electrical characteristics and thermal ratings make it suitable for use in demanding industrial and commercial applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS).
The package design supports positive temperature coefficient behavior facilitating easy paralleling of multiple devices, and the gate emitter voltage threshold of up to 20 V ensures reliable gate control. The temperature range from -55°C to 175°C allows operation across varied climate conditions.
This IGBT conforms to RoHS standards, endorsing environmental safety by limiting hazardous substances in manufacturing. Maximum collector emitter voltage of 650 V. Maximum power dissipation capability of 469 W. Surface mount TO-247-3L package with 3 pins.
Operating temperature range from -55°C to 175°C. Maximum gate emitter voltage of 20 V. Dimensions: length 15.87 mm, width 20.82 mm, height 4.82 mm. RoHS compliant design. Optimized for low conduction losses and controllable turnoff voltage overshoot.
Positive temperature coefficient for reliable paralleling. Suitable for industrial and renewable energy systems.
This onsemi FGHL75T65LQDT IGBT offers a reliable and efficient solution for high power electronic applications requiring robust voltage and current handling in a compact form factor.
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Frequently Asked Questions
The maximum collector emitter voltage of the FGHL75T65LQDT is 650 V, which allows for robust handling of high voltage applications.
This IGBT has a maximum power dissipation rating of 469 W, supporting efficient thermal management in various applications.
The operating temperature range of this IGBT is from -55°C to 175°C, making it suitable for demanding environments.
It comes in a surface mount TO-247-3L package with 3 pins, facilitating easy paralleling and integration.
The maximum gate emitter voltage for the FGHL75T65LQDT is 20 V, which provides stable gate control.
The dimensions of this IGBT are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
Yes, the FGHL75T65LQDT is compliant with RoHS standards, which restrict hazardous substances in its manufacturing.
This model is ideal for applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems.
The positive temperature coefficient behavior facilitates reliable paralleling of multiple devices, enhancing performance in various applications.
Low conduction losses optimize the efficiency of power conversion solutions, making this IGBT suitable for high-performance applications.
The FGHL75T65LQDT belongs to the FGHL75T65LQDT series, indicating its specific design and performance characteristics.
This IGBT is manufactured in India, ensuring compliance with international standards.
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