Microchip P-Channel Enhancement MOSFET 125mA 400V 3-Pin TO-243 TP2540N8-G

Microchip TP2540N8-G is a P-Channel enhancement-mode MOSFET featuring a 125mA maximum continuous drain current and 400V maximum drain-source voltage housed in a 3-pin TO-243 surface mount package. This device applies a vertical DMOS structure combined with a silicon-gate manufacturing process to deliver superior power handling and high input impedance, characteristic of MOS structures.

The device operates with a low threshold voltage max of -2.4V and low input capacitance (60pF typical), which supports extremely fast switching speeds and minimal input leakage currents. It possesses a maximum gate-source voltage rating of 20V and a forward voltage of -1.8V, withstanding operating temperatures from -55°C up to 150°C, making it suitable for demanding industrial, electronic, and power switching applications.

With a maximum power dissipation of 1.6W and a drain-source resistance of 30Ω, the TP2540N8-G offers robust thermal stability and is free from thermal runaway and secondary breakdown. Its compact TO-243 package with dimensions approximately 4.6mm length, 2.6mm width, and 1.6mm height ensures easy integration into high-density circuit boards.

This MOSFET is ideal for use in power control circuits, switching regulators, and voltage amplifiers across industrial, laboratory, and commercial electronic designs. The device is manufactured under strict quality controls in Taiwan, ensuring reliability.

Low threshold voltage (-2.4V max) enables efficient power switching. High input impedance minimizes drive power required. Vertical DMOS technology ensures low on-resistance and thermal robustness. Wide temperature operation suits diverse industrial environments.

The TO-243 surface mount package supports easy PCB integration. Explore more Microchip MOSFETs and related semiconductor components in the Electronics category at EnvMart for your electronic design needs.