onsemi Insulated Gate Bipolar Transistor IGBT 650 V, 40 A, TO-247-3L Surface Mount FGHL40T65MQDT

onsemi FGHL40T65MQDT Insulated Gate Bipolar Transistor (IGBT) is a high-performance semiconductor device rated for 650 volts collector emitter voltage and up to 40 amperes current. This device adopts a TO-247-3L surface mount package with 3 pins, offering excellent thermal and electrical performance suitable for a wide range of power conversion and control applications.

This IGBT features a robust maximum power dissipation of 238 watts and supports operation in temperatures ranging from -55°C to 175°C, making it suitable for demanding industrial environments. The maximum gate emitter voltage of 20 volts allows precise switching control, while the positive temperature coefficient design facilitates easy paralleling of multiple devices for higher current capacity.

With low conduction and switching losses, the FGHL40T65MQDT is optimized to enhance efficiency in power electronics such as solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and energy storage systems (ESS). Its compact physical size (15.87 mm length, 20.82 mm width, and 4.82 mm height) enables versatile PCB-level integration.

Maximum Collector Emitter Voltage: 650 V. Maximum Power Dissipation: 238 W. TO-247-3L Surface Mount Package. Operating Temperature Range: -55°C to 175°C. Maximum Gate Emitter Voltage: 20 V. Positive Temperature Coefficient for easy paralleling.

Low switching and conduction losses. RoHS compliant for environmental safety.

This onsemi FGHL40T65MQDT IGBT is ideal for industrial, laboratory, and commercial power electronics applications requiring reliable switching, thermal endurance, and energy efficiency. Explore further products in semiconductor discrete devices and power modules in the EnvMart catalog to complement your designs.