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Vishay Power N-Channel Depletion MOSFET 60 V, 84.8 A, 8-Pin PowerPAK SO-8 SiR514DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiR514DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 84.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The MOSFET operates with a low on-resistance of 0.01 Ω ensuring efficient conduction.
- Maximum power dissipation is rated at 83 W for reliable performance under load.
- The device supports a maximum gate-source voltage of ±20 V for flexible drive capability.
- Operating temperature ranges from -55°C to 125°C for extended environmental endurance.
- Typical gate charge is 56 nC at the rated gate voltage, optimizing switching speeds.
- It features an 8-pin PowerPAK SO-8 package suitable for surface mounting in compact designs.
- Certified to meet AEC-Q101 automotive standards, ensuring robustness in automotive applications.
- This depletion-mode MOSFET is ideal for power supplies, motor drive control, and synchronous rectification.
Product Description
Vishay SiR514DP-T1-RE3 is a Gen IV TrenchFET® Power N-Channel MOSFET designed for high-efficiency power management. It features a depletion channel mode with a nominal drain current of 84.8 A and drain-source voltage of 60 V, supplied in an 8-pin PowerPAK SO-8 package optimized for surface mounting.
This MOSFET exhibits an extremely low on-resistance of 0.01 Ω, enabling minimal conduction losses and enhanced system efficiency in power supply circuits and motor control applications. Its power dissipation rating of 83 W at maximum load allows reliable operation in demanding environments.
With a maximum gate-source voltage tolerance of ±20 V and a typical gate charge of 56 nC, the device supports fast switching characteristics. Its robust thermal performance supports operating temperatures from -55°C up to 125°C, suitable for industrial, automotive, and commercial applications.
Certified with the automotive standard AEC-Q101, the SiR514DP-T1-RE3 meets stringent reliability criteria for automotive electronics and harsh environments.
Typical use cases include power supply design, synchronous rectification for improved efficiency, and motor control systems requiring efficient switching elements. The compact 8-pin PowerPAK SO-8 package aids in saving PCB space while providing ease of assembly.
The MOSFET's low drain-source resistance enhances conduction efficiency. Capable of high power dissipation enables heat management in compact designs. Wide operating temperature range suits harsh industrial and automotive conditions.
Automatic compliance with AEC-Q101 automotive standards ensures device reliability. Depletion mode operation provides unique switching characteristics for specialized circuits.
This Vishay product is an essential component for engineers seeking high-performance MOSFETs in power electronics and automotive sectors. Explore more in our MOSFET category for related power semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 84.8 A.
It can handle a maximum drain-source voltage of 60 V.
The on-resistance of this MOSFET is rated at 0.01 Ω, ensuring efficient conduction.
The SiR514DP-T1-RE3 comes in an 8-pin PowerPAK SO-8 package, suitable for surface mounting.
The operating temperature range is from -55°C to 125°C.
The maximum power dissipation for the SiR514DP-T1-RE3 is rated at 83 W.
The typical gate charge at the rated gate voltage is 56 nC.
This MOSFET is certified to meet AEC-Q101 automotive standards.
The maximum gate-source voltage is ±20 V.
It features an N-channel type and operates in depletion mode.
The width of this MOSFET is 5.15 mm.
This model is suitable for power supplies, motor drive control, and synchronous rectification applications.
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