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onsemi QFET N-Channel MOSFET, 9 A, 200 V Enhancement Mode, 3-Pin TO-252 Package FQD12N20LTM
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | FQD12N20LTM |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features a maximum continuous drain current of 9 amperes.
- It has a maximum drain-source voltage rating of 200 volts suitable for medium power switching applications.
- The device uses surface mount technology and comes in a TO-252 package type with 3 pins.
- It offers a low on-resistance of 280 milliohms to reduce power loss and improve efficiency.
- The maximum power dissipation rating is 2.5 watts, supporting reliable thermal performance.
- The operating temperature range extends from -55°C to 150°C for robust industrial use.
- The typical gate charge is 16 nanocoulombs at Vgs, optimizing switching speeds and reducing losses.
- The maximum gate-source voltage is rated at ±20 volts ensuring device protection during operation.
Product Description
onsemi FQD12N20LTM is a QFET N-Channel MOSFET designed to deliver high performance in power electronics applications. It features a continuous drain current capacity of 9 amperes and a drain-source voltage tolerance of 200 volts, operating in enhancement mode within a three-pin TO-252 surface-mount package.
This transistor is ideal for applications such as power supplies, power factor correction (PFC), DC-DC converters, lighting ballasts, plasma display panels, and motion control systems. Its low on-resistance of 280 milliohms minimizes conduction losses, contributing to improved device efficiency and reduced heat generation.
The device can dissipate up to 2.5 watts of power while maintaining reliable operation over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial environments. Its typical gate charge of 16 nanocoulombs facilitates fast switching and reduced switching losses, enhancing performance in switching power supplies.
The maximum gate-source voltage of ±20 volts provides robustness against voltage spikes. Its compact footprint with dimensions 6.6 mm by 6.1 mm by 2.3 mm allows ease of integration into densely packed PCBs.
The MOSFET is manufactured in China by onsemi and complies with no specific standards or automotive approvals. This product represents a reliable choice for designers seeking a balance between performance, thermal management, and compact size in medium-power switching circuits.
Maximum continuous drain current of 9 amperes. Drain-source voltage rating of 200 volts for medium power applications. Low on-resistance of 280 milliohms to reduce losses. Power dissipation rating of 2.5 watts for dependable thermal operation.
Wide operating temperature range supports industrial usage. Fast switching enabled by 16 nanocoulomb gate charge. Robust ±20 volt gate-source voltage tolerance. Compact TO-252 surface mount package for flexible design.
Suitable for industrial, electronic component manufacturing, power management, and semiconductor design applications. Explore more MOSFET solutions and power semiconductor components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 9 amperes.
It has a maximum drain-source voltage rating of 200 volts, suitable for medium power applications.
The low on-resistance of this unit is 280 milliohms, which helps reduce conduction losses.
The maximum power dissipation rating is 2.5 watts, supporting reliable thermal performance.
The operating temperature range extends from -55°C to 150°C, making it suitable for robust industrial use.
The typical gate charge is 16 nanocoulombs at Vgs, optimizing switching speeds.
The maximum gate-source voltage is rated at ±20 volts, ensuring protection during operation.
The dimensions of the TO-252 package are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.
This model uses surface mount technology, allowing for flexible design integration.
It is suitable for applications such as power supplies, power factor correction, DC-DC converters, and motion control systems.
This model is an N-channel MOSFET, designed for enhancement mode operation.
This MOSFET is manufactured in China by onsemi.
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