Vishay SIA Type P-Channel MOSFET, 9 A Drain Current, 20 V Voltage, PowerPAK SC-70 Package SIA4265EDJ-T1-GE3

Vishay SIA4265EDJ-T1-GE3 is a high-performance P-Channel MOSFET designed for electronic and power management applications. It features a maximum continuous drain current of 9 A and a maximum drain-source voltage of 20 V. The device is packaged in a thermally enhanced PowerPAK SC-70 surface-mount package, which provides a small footprint area and excellent heat dissipation for reliable performance.

This MOSFET offers a low maximum drain-source resistance of 0.032 ohms, minimizing conduction losses and improving efficiency in switching circuits. With a maximum power dissipation rating of 15.6 W, it supports demanding load conditions while maintaining thermal stability. The operating temperature range from -55°C to 150°C ensures reliability in harsh industrial and commercial environments.

Typical gate charge of 13.8 nC at the gate-source voltage makes this MOSFET suitable for fast switching applications with low gate drive power. The maximum gate-source voltage of 8 V protects the device gate from voltage stress. Compliance with RoHS ensures it meets strict environmental regulations for lead-free manufacturing.

Typical ESD protection capability up to 3000 V (HBM) enhances the reliability and handling safety during assembly and operation. This MOSFET is ideal for use in load switches, battery switches, and charger switches within various industrial, consumer electronics, automotive, and power management systems.

The compact PowerPAK SC-70 package allows designers to maximize board space while ensuring thermal efficiency and durability. The device is surface mountable, compatible with automated manufacturing processes, and offers a reliable performance for industrial and laboratory equipment, power supplies, and communication devices.

Equipped with PowerPAK SC-70 surface-mount package for robust thermal performance. Offers a low maximum drain-source resistance of 0.032 ohms to enhance efficiency. Supports a maximum power dissipation of 15.6 W suitable for high-performance applications.

Operates reliably within the temperature range of -55°C to 150°C. Designed for load switching, battery switching, and charger switching roles in electronic devices. Includes typical gate charge of 13.8 nC, enabling efficient gate drive characteristics.

Supports maximum gate-source voltage of 8 V protecting gate integrity. Complies with RoHS standards ensuring environmental safety. Provides typical electrostatic discharge protection of 3000 V (HBM) for device longevity.

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