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STMicroelectronics SCTW N-Channel MOSFET 60 A 1.2 kV Enhancement 4-Pin Hip-247 SCTWA60N120G2-4

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STMicroelectronics SCTW N-Channel MOSFET 60 A 1.2 kV Enhancement 4-Pin Hip-247 SCTWA60N120G2-4

Name: STMicroelectronics SCTW N-Channel MOSFET 60 A 1.2 kV Enhancement 4-Pin Hip-247 SCTWA60N120G2-4
Brand: STMicroelectronics
SKU: 321933
Price: 49.82 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	21.1mm
Length	15.9mm
Model	SCTWA60N120G2-4
Width	5.1mm
Mount Type	Through Hole
Series	SCTW
Maximum Operating Temperature	175°C
Package Type	Hip-247
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	60A
Maximum Drain Source Voltage Vds	1.2kV
Maximum Drain Source Resistance Rds	52mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	388W
Typical Gate Charge Qg @ Vgs	22nC
Maximum Gate Source Voltage Vgs	22V
Forward Voltage Vf	3V

Key Features

The MOSFET features a maximum continuous drain current of 60 amperes.
Maximum drain source voltage stands at 1.2 kilovolts, suitable for high voltage applications.
It utilizes an enhancement channel mode with very low on-resistance of 52 milliohms.
Maximum power dissipation rating is 388 watts enabling efficient heat management.
The device offers a maximum operating temperature of 175°C and minimum operating temperature of -55°C.
Typical gate charge is just 22 nanocoulombs for fast switching and low loss.
Contains an intrinsic body diode that is very fast and robust for switching applications.
Package type is Hip-247 with through-hole mount and 4 pins for easy PCB integration.

Product Description

STMicroelectronics SCTWA60N120G2-4 is a high-performance silicon carbide power MOSFET designed with advanced 2nd generation SiC MOSFET technology. This N-Channel device supports a maximum continuous drain current of 60 A and a maximum drain source voltage of 1.2 kV, making it suitable for demanding industrial, power electronics, and automotive applications requiring robust high voltage switching.

The MOSFET operates in enhancement mode with a very low on-resistance of 52 mΩ to minimize conduction losses. Rated for a continuous power dissipation of up to 388 W, it supports efficient power management for applications such as power converters, inverters, and switch mode power supplies.

It includes a very fast and robust intrinsic body diode, enabling reliable switching performance and protection. The device features an extremely low gate charge of 22 nC at Vgs for rapid switching with lower gate drive losses. Its maximum gate-source voltage rating of 22 V allows flexible drive voltage design.

Designed for through-hole mounting, the MOSFET comes in a 4-pin Hip-247 package with compact dimensions of 15.9 mm length, 5.1 mm width, and 21.1 mm height. Operating temperature range extends from -55°C up to 175°C, ensuring durability in harsh conditions.

Typical industrial applications include power conversion, motor drives, renewable energy systems, and other high voltage industrial equipment requiring efficient N-channel MOSFETs with high reliability and performance.

The MOSFET features a maximum continuous drain current of 60 A. Maximum drain source voltage stands at 1.2 kV. Utilizes an enhancement channel mode with very low on-resistance of 52 mΩ. Maximum power dissipation rating is 388 W.

Maximum operating temperature of 175°C and minimum -55°C. Typical gate charge of 22 nC enables fast switching. Robust intrinsic body diode for reliable switching. Through-hole 4-pin Hip-247 package. Compact dimensions of 15.9 × 5.1 × 21.1 mm.

Explore more semiconductor components and power MOSFETs from STMicroelectronics on EnvMart to find suitable devices for your industrial and electronic design requirements.