Infineon CoolMOS N-Channel MOSFET, 700 V, 63.3 A, 500 W, TO-247 Package, Enhancement Mode IPW65R048CFDAFKSA1

The Infineon IPW65R048CFDAFKSA1 CoolMOS N-Channel MOSFET is a high-voltage power transistor designed using super junction technology to deliver superior performance in power conversion and switching applications. With a maximum continuous drain current of 63.3 A and a drain-source voltage rating of 700 V, it is especially suitable for industrial, power management, and automotive electronic circuits.

This enhancement-mode device is housed in a TO-247 package featuring three pins and surface mount capability, making it convenient for integration on PCB assemblies. The MOSFET offers a maximum power dissipation of 500 W and can operate within a temperature range from -40°C to 150°C, enabling reliable use in harsh and high-temperature environments.

Its low on-resistance (48 mΩ) ensures efficient conduction and minimal power loss during operation. The typical forward voltage drop is 900 mV. The 270 nC typical gate charge facilitates rapid switching suitable for PWM controls and other fast electronic switching needs. Additionally, it has Pb-free lead plating and meets RoHS compliance, supporting environmentally responsible manufacturing practices.

Package dimensions are precise with a length of 16.13 mm, width of 5.21 mm, and height of 21.1 mm. The device is halogen-free according to IEC61249-2-23 standards and has undergone rigorous 100% avalanche testing to guarantee robustness. It draws from Infineon's cutting-edge CoolMOS technology, pioneering low RDS(on)*A values for high-efficiency power devices.

This MOSFET features an enhancement mode channel for efficient switching. Maximum power dissipation is rated at 500 W ensuring robust thermal handling. It supports a maximum operating temperature up to 150°C for demanding environments.

Low drain-source resistance of 48 milliohms enables high efficiency. The device includes Pb-free lead plating and complies with RoHS standards. Package dimensions include a length of 16.13 mm, width of 5.21 mm, and height of 21.1 mm.

The typical gate charge is 270 nC at gate-source voltage, supporting fast switching. Maximum gate-source voltage is 20 V allowing safe gate control. Designed with superior thermal resistance and 100% avalanche tested for reliability.

This component is ideal for use in industrial power supplies, motor drives, inverters, HVAC units, renewable energy systems, and automotive power electronics. It offers a blend of performance and reliability demanded by modern electronic designs.

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