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Nexperia P-Channel Enhancement MOSFET 13.7 A 20 V 8-Pin MLPAK33 PXP018-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP018-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Trench MOSFET technology ensures low threshold voltage and reliable performance.
- Supports high-side load switching for efficient power management.
- Ideal for battery management and DC-DC conversion applications.
- Surface mount device with compact MLPAK33 (SOT8002) plastic package.
- Wide operating temperature range from -55°C to 175°C for industrial usage.
- Maximum power dissipation of 81 W suitable for robust applications.
- Enhancement mode with a maximum gate-source voltage of 20 V.
- Low maximum drain-source resistance (Rds) of 13.6 mΩ reduces conduction losses.
Product Description
The Nexperia PXP018-20QXJ is a Type P-Channel enhancement mode MOSFET engineered with trench technology to offer low threshold voltage and high efficiency. Enclosed in a compact 8-pin MLPAK33 surface-mounted plastic package, it supports a maximum continuous drain current of 13.7 A and withstands a maximum drain-source voltage of 20 V.
This MOSFET is designed for demanding industrial and electronic applications including high-side load switching, battery management circuits, and DC-to-DC conversion systems. It features a substantial maximum power dissipation of 81 W, endorsing its capability for handling significant loads.
Operating temperature capabilities range from -55°C to 175°C, making it suitable for harsh environments and a wide variety of industrial domains such as power electronics, automation, HVAC control systems, and manufacturing equipment.
The device offers an enhancement channel mode with a maximum gate-source voltage of 20 V and a low maximum drain-source resistance of 13.6 mΩ, optimizing performance by minimizing conduction losses and heat generation.
Trench MOSFET technology enables low threshold voltage and improved switching efficiency. Compact MLPAK33 8-pin package allows for surface mounting in tight PCB layouts. High current rating (13.7 A) supports robust load handling.
Wide operating temperature range from -55°C to 175°C ensures reliability. Maximum power dissipation of 81 W supports demanding industrial applications. Low drain-source resistance reduces power loss and heating. Ideal for battery management, DC-DC converters, and switching circuits.
This Nexperia MOSFET is a reliable choice for designing power management solutions in electronic and industrial equipment. Explore other semiconductor components and MOSFETs on EnvMart to fulfill your design requirements effectively.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13.7 A.
It can withstand a maximum drain-source voltage of 20 V.
This model comes in a compact MLPAK33 package type.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation is 81 W.
The maximum gate-source voltage is 20 V.
It features a Type P channel.
The maximum drain-source resistance (Rds) is 13.6 mΩ.
Yes, it is designed as a surface mount device.
It is suitable for high-side load switching, battery management, and DC-DC conversion applications.
The specific dimensions of the MLPAK33 package are not provided, but it is designed for compact PCB layouts.
The country of origin is India.
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