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Infineon CoolMOS P7 N-Channel MOSFET 7 A 800 V Enhancement Mode 3-Pin TO-220 IPA80R750P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA80R750P7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
Key Features
- Supports maximum continuous drain current of 7 A ensuring robust operation.
- Maximum drain-source voltage rating of 800 V suitable for high voltage circuits.
- Utilizes CoolMOS P7 series technology for improved efficiency and reduced device temperature.
- Packaged in TO-220 3-pin form factor for easy mounting and integration.
- Designed with enhancement mode channel for reliable switching performance.
- Surface mount type offering compact and reliable installation.
- Low maximum drain-source resistance of 750 milliohms minimizes conduction losses.
- Optimized for flyback applications including adapters, chargers, LED drivers, audio SMPS, and industrial power supplies.
Product Description
Infineon IPA80R750P7XKSA1 is a high-performance CoolMOS P7 N-Channel MOSFET featuring a 7 A maximum continuous drain current and 800 V maximum drain-source voltage in a 3-pin TO-220 package. It is designed for power conversion applications where efficiency and thermal management are critical, particularly in flyback converters including adapters, chargers, LED drivers, audio switching power supplies, auxiliary supplies, and various industrial power systems.
The device employs advanced CoolMOS P7 technology that offers up to 0.6% efficiency gains and achieves a 2°C to 8°C reduction in MOSFET operating temperature compared to previous generation MOSFETs and comparable competitor parts under typical flyback operating conditions. This improves system reliability and reduces cooling requirements.
With a surface mount TO-220 package and low on-resistance of 750 milliohms, this MOSFET eases thermal design and allows compact, high power density configurations. The enhancement mode channel type provides straightforward drive characteristics, simplifying design-in and enabling better production yields by reducing ESD-related failures.
This MOSFET is ideal for electronic engineers and designers aiming for efficient power supply designs in commercial, industrial, and consumer electronics domains. Maximum Continuous Drain Current: 7 A. Maximum Drain-Source Voltage: 800 V.
Package Type: TO-220. Pin Count: 3. Channel Type: N-Channel, Enhancement mode. Series: CoolMOS P7. Mount Type: Surface mount. Maximum Drain-Source Resistance (Rds): 750 mΩ. Designed for flyback adapter, charger, LED driver, audio SMPS, AUX, and industrial power circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 A.
It has a maximum drain-source voltage rating of 800 V, making it suitable for high voltage circuits.
This MOSFET is packaged in a TO-220 3-pin form factor, which facilitates easy mounting and integration.
It features an N-Channel enhancement mode, which provides reliable switching performance.
The maximum drain-source resistance (Rds) is 750 milliohms, which helps minimize conduction losses.
It is optimized for flyback applications including adapters, chargers, LED drivers, audio SMPS, and industrial power supplies.
This model utilizes CoolMOS P7 series technology, which improves efficiency and reduces device temperature.
It achieves a reduction in operating temperature by 2°C to 8°C compared to previous generation MOSFETs under typical conditions, improving system reliability.
Yes, it is designed as a surface mount type, allowing for compact and reliable installation.
This MOSFET has a pin count of 3, which is standard for its TO-220 package.
The country of origin for this MOSFET is India.
It belongs to the CoolMOS P7 series, which is known for its high-performance characteristics.
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