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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPZA60R080P7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 129W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPZA60R080P7XKSA1 is a CoolMOS C7 N-Channel MOSFET designed for demanding power applications requiring a maximum continuous drain current of 37 A and a drain-source voltage of up to 600 V. This device features an enhancement channel mode in a 4-pin TO-247 package, making it suitable for industrial, power supply, automotive, and consumer electronics use.
The CoolMOS C7 platform provides excellent switching performance and high efficiency due to its low conduction resistance and reduced gate charge. This results in lower switching and conduction losses, enhancing overall device reliability and energy efficiency in power conversion applications.
The MOSFET supports a maximum power dissipation of 129 W and operates reliably across a temperature range from -55°C to 150°C, making it robust for both harsh and controlled environments. The device maintains a forward voltage of 900 mV and can tolerate gate-source voltages up to 20 V, providing safety margin during operation.
Its 4-pin TO-247 through-hole package simplifies mounting and integration into power circuits, offering mechanical stability and heat dissipation capacity.
This MOSFET is ideal for power factor correction (PFC), LLC resonant converters, industrial automation, and other switching applications where high efficiency and robustness are critical.
Maximum continuous drain current of 37 A ensures heavy load handling. 600 V maximum drain-source voltage provides high voltage tolerance. CoolMOS C7 series technology enhances efficiency and switching performance. Low maximum drain-source resistance of 80 mΩ minimizes conduction losses.
Typical gate charge of 51 nC allows faster switching speeds. Maximum power dissipation rated at 129 W ensures thermal robustness. Wide operating temperature range from -55°C to 150°C supports diverse environments. Robust gate-source voltage tolerance up to 20 V prevents damage.
Forward voltage of 900 mV supports efficient conduction. Designed for through-hole mounting ensuring mechanical stability.
Explore the Electronics & Electricals category on EnvMart to find this Infineon MOSFET and other high-quality semiconductor components purpose-built for industrial, laboratory, and commercial electronic applications.
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