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Infineon CoolMOS C7 N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R080P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPZA60R080P7XKSA1
Mount Type Through Hole
Series CoolMOS C7
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 37A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 80mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 129W
Typical Gate Charge Qg @ Vgs 51nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Maximum continuous drain current of 37 A ensures heavy load handling.
  • 600 V maximum drain-source voltage provides high voltage tolerance.
  • CoolMOS C7 series technology enhances efficiency and switching performance.
  • Low maximum drain-source resistance of 80 mΩ minimizes conduction losses.
  • Typical gate charge of 51 nC allows faster switching speeds.
  • Maximum power dissipation rated at 129 W ensures thermal robustness.
  • Wide operating temperature range from -55°C to 150°C supports diverse environments.
  • Robust gate-source voltage tolerance up to 20 V prevents damage.

Product Description

Infineon IPZA60R080P7XKSA1 is a CoolMOS C7 N-Channel MOSFET designed for demanding power applications requiring a maximum continuous drain current of 37 A and a drain-source voltage of up to 600 V. This device features an enhancement channel mode in a 4-pin TO-247 package, making it suitable for industrial, power supply, automotive, and consumer electronics use.

The CoolMOS C7 platform provides excellent switching performance and high efficiency due to its low conduction resistance and reduced gate charge. This results in lower switching and conduction losses, enhancing overall device reliability and energy efficiency in power conversion applications.

The MOSFET supports a maximum power dissipation of 129 W and operates reliably across a temperature range from -55°C to 150°C, making it robust for both harsh and controlled environments. The device maintains a forward voltage of 900 mV and can tolerate gate-source voltages up to 20 V, providing safety margin during operation.

Its 4-pin TO-247 through-hole package simplifies mounting and integration into power circuits, offering mechanical stability and heat dissipation capacity.

This MOSFET is ideal for power factor correction (PFC), LLC resonant converters, industrial automation, and other switching applications where high efficiency and robustness are critical.

Maximum continuous drain current of 37 A ensures heavy load handling. 600 V maximum drain-source voltage provides high voltage tolerance. CoolMOS C7 series technology enhances efficiency and switching performance. Low maximum drain-source resistance of 80 mΩ minimizes conduction losses.

Typical gate charge of 51 nC allows faster switching speeds. Maximum power dissipation rated at 129 W ensures thermal robustness. Wide operating temperature range from -55°C to 150°C supports diverse environments. Robust gate-source voltage tolerance up to 20 V prevents damage.

Forward voltage of 900 mV supports efficient conduction. Designed for through-hole mounting ensuring mechanical stability.

Explore the Electronics & Electricals category on EnvMart to find this Infineon MOSFET and other high-quality semiconductor components purpose-built for industrial, laboratory, and commercial electronic applications.

Infineon CoolMOS C7 N-Channel MOSFET, 37 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R080P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 37 A, allowing it to handle heavy loads effectively.

This MOSFET has a maximum drain-source voltage of 600 V, providing high voltage tolerance for various applications.

CoolMOS C7 technology enhances efficiency and switching performance, resulting in lower switching and conduction losses.

The maximum power dissipation rated for this MOSFET is 129 W, ensuring thermal robustness during operation.

The typical gate charge for this model is 51 nC, which allows for faster switching speeds in power applications.

This MOSFET operates reliably within a temperature range from -55°C to 150°C, making it suitable for diverse environments.

It can tolerate gate-source voltages up to 20 V, providing a safety margin during operation.

This model comes in a TO-247 package type, which is designed for through-hole mounting.

The maximum drain-source resistance is 80 mΩ, which minimizes conduction losses during operation.

It is suitable for applications such as power factor correction (PFC), LLC resonant converters, and industrial automation.

This MOSFET features a pin count of 4, facilitating its integration into circuits.

The forward voltage for this MOSFET is 900 mV, which supports efficient conduction.

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