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DiodesZetex Dual N-Channel MOSFET, 30 V, 3.4 A, Enhancement Mode, 6-Pin TSOT Package DMN3061SVT-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | DMN3061SVT-7 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | DMN3061 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.08W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Dual |
Key Features
- This MOSFET has an enhancement mode channel type for efficient switching performance.
- The device supports a maximum power dissipation of 1.08 W for thermal stability.
- Featuring a low drain-source resistance of 200 mΩ, it reduces power loss.
- Its maximum gate-source voltage is rated at 20 V to ensure robust operation.
- The MOSFET operates reliably from -55°C up to 150°C, suitable for automotive and industrial environments.
- Its compact dimensions (2.9 mm length, 1.6 mm width, 0.9 mm height) enable space-saving PCB design.
- Forward voltage drop is 0.7 V, optimizing voltage efficiency in circuits.
- It uses surface mount technology (TSOT package), facilitating automated assembly.
Product Description
DiodesZetex DMN3061SVT-7 is a dual N-Channel enhancement mode MOSFET designed for high efficiency power management applications. Featuring a maximum continuous drain current of 3.4 A and a drain-source voltage of 30 V, it delivers optimal switching performance with low on-state resistance.
The device is housed in a compact 6-pin TSOT surface mount package with dimensions of 2.9 mm length, 1.6 mm width, and 0.9 mm height. Its enhancement mode channel ensures fast switching speeds and low input capacitance, making it ideal for precise power control circuits.
Key technical parameters include a maximum drain-source resistance of 200 mΩ, a typical gate charge of 3.5 nC at Vgs, and a forward voltage of 0.7 V. The maximum gate-source voltage rating is 20 V, and the MOSFET supports power dissipation up to 1.08 W, allowing stable operation in demanding environments.
Operating temperature ranges from -55°C to 150°C, supporting automotive or industrial standards, although it does not carry specific automotive certification. The transistor is configured as a dual arrangement with one element per chip, manufactured in China.
This MOSFET suits applications in industrial electronics, power conversion, switching regulators, and embedded systems requiring low loss and reliable switching. This MOSFET has an enhancement mode channel type for efficient switching performance.
The device supports a maximum power dissipation of 1.08 W for thermal stability. Featuring a low drain-source resistance of 200 mΩ, it reduces power loss. Its maximum gate-source voltage is rated at 20 V to ensure robust operation.
The MOSFET operates reliably from -55°C up to 150°C, suitable for automotive and industrial environments. Its compact dimensions (2.9 mm length, 1.6 mm width, 0.9 mm height) enable space-saving PCB design. Forward voltage drop is 0.7 V, optimizing voltage efficiency in circuits.
It uses surface mount technology (TSOT package), facilitating automated assembly. Explore the comprehensive range of MOSFETs at EnvMart for various electronic and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.4 A.
It supports a maximum drain-source voltage of 30 V.
The dimensions of the TSOT package are 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height.
The maximum power dissipation for this MOSFET is rated at 1.08 W.
The maximum gate-source voltage rating is 20 V.
This model operates reliably within a temperature range of -55°C to 150°C.
The forward voltage drop is 0.7 V, which helps optimize voltage efficiency in circuits.
The maximum drain-source resistance is 200 mΩ, which reduces power loss during operation.
It features an enhancement mode channel type, which supports efficient switching performance.
The typical gate charge at Vgs is 3.5 nC.
This MOSFET is suitable for applications in industrial electronics, power conversion, switching regulators, and embedded systems.
The transistor is configured as a dual arrangement with one element per chip.
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