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Vishay TrenchFET Gen IV N-Channel MOSFET, 100 V, 81 A, 100 W Surface Mount SO-8 Package SiR104ADP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 6.15mm |
| Length | 5.15mm |
| Model | SiR104ADP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | TrenchFET Gen IV |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 81A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The MOSFET supports a maximum continuous drain current of 81 A.
- It operates with a maximum drain-source voltage of 100 V for enhanced performance.
- Packaged in an 8-pin SO-8 surface mount package suitable for compact PCB assembly.
- Features a low drain-source resistance of 7.2 mΩ to reduce conduction losses.
- Typical gate charge is 70 nC at a gate-source voltage of 20 V, enabling fast switching.
- Operating temperature range from -55°C to 150°C ensures reliability under harsh environments.
- Forward voltage drop is rated at 1.1 V for efficient conduction.
Product Description
Vishay SiR104ADP-T1-RE3 is a cutting-edge TrenchFET Gen IV N-Channel MOSFET delivering high current and voltage capabilities in a compact SO-8 package. It supports a maximum continuous drain current of 81 A and a drain-source voltage up to 100 V, making it suitable for demanding power electronic applications.
Designed for surface-mount technology, this MOSFET offers a low RDS(on) resistance of 7.2 mΩ resulting in reduced power losses and improved efficiency. The device features a typical gate charge of 70 nC at 20 V, allowing for fast and efficient switching dynamics. Its high power dissipation rating of 100 W and wide operating temperature range (-55°C to 150°C) make it highly reliable for industrial, automotive, and consumer electronics applications.
Ideal for use in power management circuits, motor drives, DC-DC converters, and switching power supplies, this MOSFET combines performance and durability. The SO-8 package with 8 pins ensures easy PCB mounting and excellent thermal management.
Maximum continuous drain current: 81 A. Maximum drain-source voltage: 100 V. Low drain-source resistance of 7.2 mΩ. Typical gate charge of 70 nC enabling fast switching. Wide operating temperature range from -55°C to 150°C.
Forward voltage drop: 1.1 V. Surface mountable 8-pin SO-8 package.
Applications include industrial power electronics, automotive systems, and advanced consumer electronic devices. Explore more Vishay semiconductor solutions on EnvMart for reliable and high-performance components.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 81 A.
It supports a maximum drain-source voltage of 100 V.
This model is packaged in an 8-pin SO-8 surface mount package.
The typical gate charge is 70 nC at a gate-source voltage of 20 V.
The operating temperature range is from -55°C to 150°C.
The forward voltage drop is rated at 1.1 V.
It features a low drain-source resistance of 7.2 mΩ.
The dimensions are 5.15 mm in length, 5.15 mm in width, and 6.15 mm in height.
The maximum power dissipation is rated at 100 W.
This model has an N-channel type.
It is suitable for applications in power management circuits, motor drives, DC-DC converters, and switching power supplies.
The maximum gate-source voltage is 20 V.
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