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ROHM Insulated Gate Bipolar Transistor IGBT, 40 A Collector Current, 650 V Voltage, 3-Pin TO-247GE Through RGWSX2TS65GC13

Category IGBT Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGWSX2TS65GC13
Mount Type Through Hole
Series RGWSX2TS65GC13
Maximum Operating Temperature 175°C
Package Type TO-247GE
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
Maximum Power Dissipation Pd 288W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • Designed for high speed fast switching to enhance system efficiency.
  • Features low collector emitter saturation voltage of 1.6 V to reduce power losses.
  • Supports wide operating temperature range from -40°C to 175°C.
  • Complies with RoHS directives ensuring lead-free and environmentally friendly construction.
  • Includes ±30 V maximum gate emitter voltage for robust gate control.
  • Mount type through-hole providing secure PCB attachment and ease of handling.
  • Suitable for industrial and electronic power control applications.
  • Packaged in industry standard TO-247GE to support high power dissipation up to 288 W.

Product Description

ROHM RGWSX2TS65GC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Rated for a maximum continuous collector current of 40 A and a maximum collector emitter voltage of 650 V, this device is housed in a 3-pin TO-247GE through-hole package which offers robust mechanical stability and efficient heat dissipation.

The RGWSX2TS65GC13 features low collector emitter saturation voltage of 1.6 V, which helps to reduce conduction losses and improve overall efficiency in power management circuits. Its high speed fast switching capability makes it ideal for use in industrial electronics, power supplies, motor drives, and other applications requiring efficient power control.

This IGBT operates reliably within a wide temperature range from -40°C to 175°C, allowing it to withstand harsh operating environments commonly found in automotive, industrial, and HVAC sectors. The device supports a maximum gate emitter voltage of ±30 V to ensure stable gate control and switching performance.

Manufactured with lead-free plating and fully compliant with RoHS standards, the RGWSX2TS65GC13 supports environmentally responsible product designs. Its TO-247GE package allows for effective heat dissipation with a maximum power dissipation of 288 W, enhancing durability and long service life in demanding industrial and electronic setups.

This product is suitable for engineers and designers working on power semiconductor projects where efficiency, reliability, and compact form-factor are critical. It is an excellent choice for upgrading or building circuits requiring high-voltage and high-current switching with minimal losses.

Designed for high speed fast switching to enhance system efficiency. Features low collector emitter saturation voltage of 1.6 V to reduce power losses. Supports wide operating temperature range from -40°C to 175°C. Complies with RoHS directives ensuring lead-free and environmentally friendly construction.

Includes ±30 V maximum gate emitter voltage for robust gate control. Mount type through-hole providing secure PCB attachment and ease of handling. Suitable for industrial and electronic power control applications. Packaged in industry standard TO-247GE to support high power dissipation up to 288 W.

Explore additional ROHM semiconductor and electronic components on EnvMart for industrial, automotive, HVAC, and laboratory use cases.

ROHM Insulated Gate Bipolar Transistor IGBT, 40 A Collector Current, 650 V Voltage, 3-Pin TO-247GE Through RGWSX2TS65GC13
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 40 A.

It has a maximum collector emitter voltage rating of 650 V.

The collector emitter saturation voltage is 1.6 V.

This IGBT operates within a temperature range of -40°C to 175°C.

The maximum power dissipation for this IGBT in the TO-247GE package is 288 W.

The maximum gate emitter voltage supported is ±30 V.

It uses a through-hole mounting type for secure PCB attachment.

This model is housed in a TO-247GE package.

Yes, it complies with RoHS directives, ensuring it is lead-free and environmentally friendly.

It is suitable for industrial and electronic power control applications, including power supplies and motor drives.

This IGBT has a pin count of 3.

This IGBT belongs to the RGWSX2TS65GC13 series.

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