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onsemi N-Channel MOSFET LFPAK 71 A 40 V Enhancement Mode Surface Mount 4-Pin NVMYS5D3N04C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NVMYS5D3N04C |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NVMYS5D3N04C |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 71A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 71 amperes for high power handling.
- Drain-source voltage rating of 40 volts provides good voltage tolerance.
- Low on-resistance of 5.3 milliohms to minimize conduction losses.
- Small footprint 5x6 mm LFPAK package enabling compact surface mounting.
- High maximum power dissipation of 50 watts supports demanding loads.
- Maximum operating temperature up to 175°C suitable for harsh environments.
- Typical gate charge of 16 nanocoulombs to reduce driver power loss.
- Automotive grade AEC-Q101 compliant ensuring reliability standards.
Product Description
onsemi NVMYS5D3N04C is a high-performance N-Channel MOSFET designed in a compact 5x6 mm LFPAK surface mount package. It supports a maximum continuous drain current of 71 amperes and a maximum drain-source voltage of 40 volts, delivering efficient power switching for automotive, industrial, and power electronics applications.
This device features a low on-resistance of 5.3 milliohms which reduces conduction loss and improves energy efficiency in power conversion circuits. The typical gate charge of 16 nanocoulombs lowers the driving losses, enhancing overall system performance.
Boasting a maximum power dissipation of 50 watts and an operating temperature range from -55°C to 175°C, the NVMYS5D3N04C is suited to operate reliably in demanding and harsh environments including automotive power management systems.
The device meets automotive AEC-Q101 standards, ensuring the highest quality and durability expected in vehicle electronics and industrial control equipment. The enhancement mode channel provides normally-off operation offering easy integration with various control architectures.
The small LFPAK4 package enables compact PCB layouts ideal for space-constrained designs with surface-mount assembly requirements. This MOSFET is Pb-free and PPAP capable for automotive production compliance.
Maximum continuous drain current 71A for high current applications. Drain-source voltage of 40V for medium-voltage switching tasks. Low Rds(on) reduces power loss and heat generation. Compact footprint supports miniaturized electronics designs.
High thermal power dissipation rating for robust operation. Wide operating temperature range and automotive qualification. Reduced gate charge improves switching efficiency. Surface mount LFPAK package for modern electronic assemblies.
Enhancement mode for standard N-Channel MOSFET applications.
This power MOSFET is well suited for use in automotive systems, industrial machinery, power supplies, and other electronic circuits requiring reliable high-current switching with compact form factor. Explore the broad onsemi semiconductor portfolio at EnvMart for more power management solutions.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current of the NVMYS5D3N04C is 71 amperes, suitable for high power handling applications.
This MOSFET has a drain-source voltage rating of 40 volts, providing good voltage tolerance for various applications.
The on-resistance of this model is 5.3 milliohms, which helps minimize conduction losses in power circuits.
The typical gate charge for the NVMYS5D3N04C is 16 nanocoulombs, which reduces driver power loss.
The LFPAK package dimensions are 5mm in length, 4.25mm in width, and 1.15mm in height.
The maximum power dissipation for the NVMYS5D3N04C is 50 watts, allowing it to support demanding loads.
Yes, the NVMYS5D3N04C is AEC-Q101 compliant, ensuring it meets automotive reliability standards.
The NVMYS5D3N04C features an enhancement mode N-channel, providing normally-off operation.
The maximum gate-source voltage for the NVMYS5D3N04C is 20 volts.
The forward voltage of the NVMYS5D3N04C is 1.2 volts.
The LFPAK package of this MOSFET has a pin count of 4.
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