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STMicroelectronics MDmesh M2 N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 STF12N60M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF12N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Designed with MDmesh M2 technology for enhanced switching performance.
- Features 3-pin TO-220 package suitable for through-hole mounting.
- Maximum power dissipation of 25 W ensuring reliable operation.
- Typical gate charge of 16 nC helps reduce switching losses.
- Operational temperature range from -55°C to 150°C for diverse environments.
- Gate source voltage rated from -25 V to +25 V for robust control.
- Low drain-source resistance of 450 mΩ improves efficiency.
Product Description
The STMicroelectronics STF12N60M2 is an N-channel MDmesh M2 series MOSFET designed for high voltage switching applications. It offers 600 V maximum drain-source voltage and supports a continuous drain current of 9 A, making it suitable for power management in industrial and electronic systems.
Packaged in a 3-pin TO-220 through-hole mounting format, this MOSFET ensures easy installation and durability in harsh environments. The device features an enhancement channel mode with low typical gate charge of 16 nC, reducing switching losses and improving overall efficiency in resonant switching power supplies such as LLC converters.
Its robust construction allows operation from temperatures as low as -55°C up to 150°C, suitable for demanding industrial, manufacturing, and automotive electronics. The maximum power dissipation is rated at 25 W, supporting stable and reliable performance under heavy electrical load.
The forward voltage is 1.6 V, and the device provides low on-resistance of 450 mΩ, minimizing conduction losses. The maximum gate-source voltage ranges from -25 V to +25 V, offering robust controlling capabilities for precise power regulation.
Compact physical dimensions of height 16.4 mm, length 10.4 mm, and width 4.6 mm help optimize PCB space utilization. This MOSFET series does not carry specific standards or automotive approvals and is manufactured in China.
Designed with MDmesh M2 technology for enhanced switching performance. Features 3-pin TO-220 package suitable for through-hole mounting. Maximum power dissipation of 25 W ensuring reliable operation. Typical gate charge of 16 nC helps reduce switching losses.
Operational temperature range from -55°C to 150°C for diverse environments. Gate source voltage rated from -25 V to +25 V for robust control. Low drain-source resistance of 450 mΩ improves efficiency. Compact dimensions: 16.4 mm height, 10.4 mm length, 4.6 mm width.
This MOSFET is ideal for use in power electronic circuits, industrial automation, and electronic component manufacturing. It supports efficient power switching, making it well suited to applications in power supplies, motor control, and signal amplification. Explore more STMicroelectronics power MOSFETs and electronic components on EnvMart for reliable industrial-grade electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
The STF12N60M2 has a maximum drain-source voltage rating of 600 V.
The typical gate charge for this MOSFET is 16 nC, which helps reduce switching losses.
This MOSFET operates within a temperature range of -55°C to 150°C.
The dimensions of this model are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model uses a 3-pin TO-220 package suitable for through-hole mounting.
The maximum power dissipation for this MOSFET is rated at 25 W.
The drain-source resistance of this model is 450 mΩ, which helps improve efficiency.
The gate-source voltage for this MOSFET is rated from -25 V to +25 V.
This MOSFET is suitable for power electronic circuits, industrial automation, and electronic component manufacturing.
The forward voltage for this model is 1.6 V.
The STF12N60M2 features an N-channel type, designed for enhancement mode operation.
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