Toshiba N-Channel MOSFET 8 A 60 V Enhancement Mode 3-Pin TO-252 TK8S06K3L

Toshiba TK8S06K3L is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power handling. This enhancement mode transistor supports a maximum continuous drain current of 8 A and a drain-source voltage of up to 60 V, making it suitable for automotive, industrial, and electronic power management applications.

It comes in a compact 3-pin TO-252 surface mount package, facilitating easy integration into printed circuit boards. The device complies with the automotive standard AEC-Q101, confirming its suitability for automotive electronics and related rigorous environments.

Key electrical characteristics include a low RDS(ON) of 43 mΩ at a gate voltage of 10 V, ensuring minimal conduction losses. The maximum power dissipation rating of 25 W allows reliable thermal performance under typical operating conditions.

Operating temperature ranges from -55°C to 175°C enable use in diverse ambient conditions. The maximum gate-source voltage rating of 20 V protects the gate oxide integrity, while a typical gate charge of 10 nC allows efficient switching dynamics.

With a very low leakage current of 10 μA maximum at rated voltage, the TK8S06K3L ensures low power losses during off-state operation. The device is commonly used in automotive motor driver circuits, DC-DC converters, and switching voltage regulator designs.

Maximum continuous drain current of 8 A. Drain-source voltage rating of 60 V. Low RDS(on) 43 mΩ typical at Vgs = 10 V. Maximum power dissipation 25 W. 3-pin TO-252 surface mount package. Meets AEC-Q101 automotive standard.

Operating temperature -55°C to 175°C. Maximum gate-source voltage 20 V. Typical gate charge 10 nC at Vgs. Low leakage current IDSS maximum 10 μA. Ideal for industrial, automotive, and electronic semiconductor applications. Explore more Toshiba MOSFETs and related semiconductor components on EnvMart.