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Toshiba N-Channel MOSFET, 100 A, 40 V Enhancement Mode, 3-Pin TO-252 Package TK100S04N1L
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TK100S04N1L |
| Width | 7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 180W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a low drain-source on-resistance of typically 1.9 mΩ at VGS = 10 V.
- Has a maximum power dissipation capacity of 180 W to support robust applications.
- Equipped with a 3-pin TO-252 surface mount package for compact PCB integration.
- Operates efficiently within a wide temperature range from -55°C to 175°C.
- Includes a typical gate charge of 76 nC at VGS, enhancing switching performance.
- Ensures low leakage current with IDSS of 10 μA maximum at VDS = 40 V.
- Designed to meet automotive standard AEC-Q101 for reliability in demanding conditions.
- Forward voltage of -1.2 V and maximum gate-source voltage rating of 20 V.
Product Description
The Toshiba TK100S04N1L is a high-performance N-Channel Power MOSFET designed for switching and automotive applications. Featuring enhancement mode operation, it is optimized for high-efficiency power control with a continuous drain current rating of 100 A and a maximum drain-source voltage of 40 V.
Housed in a TO-252 package with a 3-pin surface mount configuration, this MOSFET offers compact size (6.5 mm length, 7 mm width, and 2.3 mm height) and ease of PCB integration. It provides excellent low on-resistance performance at RDS(ON) = 1.9 mΩ typical at VGS = 10 V, ensuring minimal conduction losses and improved power efficiency.
With a maximum power dissipation of 180 W, it supports demanding industrial and automotive switching roles. The device operates reliably across a wide temperature spectrum from -55°C to 175°C, making it suitable for harsh environments. It features a gate charge of 76 nC and is designed for fast switching with enhanced control, contributing to reduced switching losses.
The TK100S04N1L complies with the automotive standard AEC-Q101, ensuring quality and reliability for vehicle power management systems. Additional electrical characteristics include a maximum gate-source voltage rating of 20 V and a low leakage current specification, which further contribute to high stability and performance.
Low drain-source on-resistance supporting efficient switching. High maximum continuous drain current and power dissipation for robust applications. Compact TO-252 package for surface mount usage. Wide operating temperature range for versatile use in automotive and industrial contexts.
Compliance with automotive quality standards. Low gate charge and leakage current for enhanced performance.
This MOSFET is ideal for automotive systems, switching voltage regulators, and motor driver circuits where efficient power management and durability are essential. The product is manufactured in Japan and represents Toshiba's commitment to high-quality semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It has a maximum drain-source voltage rating of 40 V.
The maximum power dissipation capacity is 180 W.
The typical drain-source on-resistance is 1.9 mΩ at VGS = 10 V.
This model is housed in a TO-252 package, which features a 3-pin surface mount configuration.
It operates efficiently within a wide temperature range from -55°C to 175°C.
It complies with the automotive standard AEC-Q101, ensuring reliability in demanding conditions.
The typical gate charge is 76 nC at VGS.
The maximum gate-source voltage rating is 20 V.
The forward voltage is -1.2 V.
The dimensions are 6.5 mm in length, 7 mm in width, and 2.3 mm in height.
This MOSFET is suitable for automotive systems, switching voltage regulators, and motor driver circuits.
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