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DiodesZetex N-Channel MOSFET, 1.7 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode, 3-Pin ZXM61N02FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3.05mm
Model ZXM61N02FTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.7A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 806mW
Typical Gate Charge Qg @ Vgs 3.4nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 950mV
onsemi N-Channel MOSFET, 3.2 A, 20 V Enhancement, 3-Pin SOT-23 NTR4501NT1GBrand onsemi

Key Features

  • Enhancement mode channel type for efficient switching performance.
  • Packaged in a compact 3-pin SOT-23 surface mount package.
  • Maximum power dissipation of 806 mW suitable for low power applications.
  • Operates within a temperature range of -55°C to 150°C.
  • Low typical gate charge of 3.4 nC enables fast switching.
  • Maximum drain-source resistance of 180 mΩ minimizes power loss.
  • Forward voltage drop approximately 950 mV for conduction efficiency.
  • Complies with automotive standard AEC-Q101 for enhanced reliability.

Product Description

DiodesZetex ZXM61N02FTA is a high-performance N-Channel MOSFET designed for electronic applications requiring reliable switching and amplification. With a maximum continuous drain current of 1.7 A and drain-source voltage rating of 20 V, this device offers robust operation in compact circuit designs.

This transistor is housed in a small 3-pin SOT-23 surface mount package measuring 3.05 mm long, 1.4 mm wide, and 1 mm in height, enabling easy integration in space-constrained assemblies. The enhancement mode channel ensures fast switching and minimal leakage current, making it suitable for power management, load switching, and signal amplification in industrial, automotive, and consumer electronics applications.

The device supports a maximum power dissipation of 806 mW, and its operating temperature range from -55°C up to 150°C assures reliable performance under harsh environmental conditions. It features a low typical gate charge of 3.4 nC at operating gate voltage that allows efficient switching with minimal energy loss. Its maximum drain-source resistance (Rds) of 180 mΩ improves power efficiency by reducing conduction losses.

Additional specifications include a forward voltage of 950 mV and capability to handle gate-source voltages between -12 V and +12 V. The product conforms to the automotive industry standard AEC-Q101, indicating suitability for automotive electronic systems where durability and stability are critical.

This MOSFET is ideal for industrial electronics, automotive modules, power management circuits, and consumer electronic devices, providing high efficiency in surface mount applications.

Enhancement mode channel type for efficient switching performance. Maximum continuous drain current of 1.7 A and voltage rating of 20 V. Compact 3-pin SOT-23 surface mount package suitable for PCB assembly. Wide operating temperature range from -55°C to 150°C.

Low gate charge enables fast and energy-efficient switching. Compliance with automotive standard AEC-Q101 for reliability. Low drain-source resistance for reduced conduction losses. Maximum power dissipation of 806 mW supports low power applications.

Explore EnvMart’s extensive range of semiconductor components and MOSFET devices for precise and reliable electronic circuit design.

DiodesZetex N-Channel MOSFET, 1.7 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode, 3-Pin ZXM61N02FTA
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Frequently Asked Questions

The maximum continuous drain current of this model is 1.7 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

It is packaged in a compact 3-pin SOT-23 surface mount package, measuring 3.05 mm in length, 1.4 mm in width, and 1 mm in height.

The operating temperature range is from -55°C to 150°C.

The typical gate charge at operating gate voltage is 3.4 nC.

This model supports a maximum power dissipation of 806 mW.

The maximum drain-source resistance is 180 mΩ, which helps minimize power loss.

Yes, it complies with the automotive standard AEC-Q101, indicating enhanced reliability for automotive applications.

It is suitable for power management, load switching, and signal amplification in industrial, automotive, and consumer electronics applications.

The forward voltage drop is approximately 950 mV, contributing to conduction efficiency.

The maximum gate-source voltage that this MOSFET can handle is between -12 V and +12 V.

This model features an enhancement mode N-channel type, which provides efficient switching performance.

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