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DiodesZetex N-Channel MOSFET 2.6A 30V Surface Mount 3-Pin SC-70 DMN3067LW-7

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DiodesZetex N-Channel MOSFET 2.6A 30V Surface Mount 3-Pin SC-70 DMN3067LW-7

Name: DiodesZetex N-Channel MOSFET 2.6A 30V Surface Mount 3-Pin SC-70 DMN3067LW-7
Brand: DiodesZetex
SKU: 317398
Price: 0.17 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	DMN3067LW-7
Width	1.35mm
Mount Type	Surface
Series	DMN3067LW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	2.6A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	98mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.1W
Typical Gate Charge Qg @ Vgs	4.6nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.2V

Key Features

This enhancement mode MOSFET operates with a maximum power dissipation of 1.1 watts.
It features a low maximum drain-source resistance of 98 milliohms for efficient switching.
Designed for automotive applications, it meets the AEC-Q101 standard.
The device withstands operating temperatures from -55°C up to 150°C.
Its compact SC-70 package measures 2.2mm in length, 1.35mm in width, and 1mm in height.
The maximum gate-source voltage ranges from -12 to +12 volts.
Typical gate charge is 4.6 nanoCoulombs at Vgs.
Forward voltage is 1.2 volts ensuring reliability in switching circuits.

Product Description

DiodesZetex DMN3067LW-7 is a high-performance N-Channel Enhancement Mode MOSFET designed for use in electronic circuits requiring efficient power switching and amplification. It supports a maximum continuous drain current of 2.6 amperes and a maximum drain-source voltage of 30 volts, making it suitable for low to medium power applications in automotive, industrial, and consumer electronics sectors.

This MOSFET uses a surface mount SC-70 package with 3 pins, providing a compact footprint ideal for space-constrained PCB designs. The maximum drain-source resistance of 98 milliohms ensures low power dissipation and increased efficiency. It complies with the automotive AEC-Q101 standard, reflecting its reliability and ruggedness for harsh environments.

The device operates effectively within a wide temperature range of -55°C to +150°C, supporting robust performance in demanding conditions. The gate charge of 4.6 nanoCoulombs at typical Vgs levels facilitates fast switching speeds, advantageous in switching regulator circuits and power management applications.

Additional attributes include a maximum power dissipation of 1.1 watts, maximum gate-source voltage ranging from -12 to +12 volts, and a forward voltage of 1.2 volts. The compact physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height enable integration into miniaturized electronic modules.

Industrial and automotive designers can leverage the DMN3067LW-7 MOSFET in embedded power control circuits, motor drivers, load switches, and general-purpose amplification roles. Its surface mount package allows automated assembly, improving manufacturing efficiency.

This MOSFET provides an efficient power switching solution with low on-resistance. It meets rigorous automotive qualification standards ensuring durability. Designed for broad thermal tolerance to accommodate industrial and automotive environments.

Compact SC-70 package supports high-density PCB layouts. Provides stable gate control for precise electronic switching. Suits multiple applications including power management, load switching, and amplification. Browse our extensive range of MOSFETs and discrete semiconductors on EnvMart to find the ideal component for your electronic design challenges.