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DiodesZetex N-Channel MOSFET 5.8 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H099SFG-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.8mm |
| Length | 3.35mm |
| Model | DMN10H099SFG-7 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMN10H099SFG |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.31W |
| Typical Gate Charge Qg @ Vgs | 25.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.77V |
Key Features
- This MOSFET features an 8-pin PowerDI3333 package designed for surface mounting applications.
- It operates in enhancement mode, providing reliable switching performance.
- The maximum drain-source resistance (Rds) is 99 milliohms, ensuring low conduction losses.
- Typical forward voltage drop is 0.77 V, optimizing power efficiency.
- Maximum power dissipation rating is 2.31 W to handle moderate thermal loads.
- Operating temperature ranges from -55°C to +150°C, suitable for harsh industrial environments.
- Maximum gate-source voltage is ±20 V, supporting robust gate drive voltages.
- The component is automotive standard compliant with AEC-Q101 qualification.
Product Description
DiodesZetex DMN10H099SFG-7 is a dual N-Channel MOSFET transistor designed for reliable power switching in electronic circuits. With a maximum continuous drain current of 5.8 A and a drain-source voltage rating of 100 V, this device suits a wide range of applications requiring efficient and robust switching performance.
It features the PowerDI3333 8-pin surface mount package, which ensures ease of installation and compact PCB layouts. The MOSFET operates in enhancement mode, typically offering a low on-resistance of 99 milliohms and a forward voltage drop of 0.77 volts, contributing to improved power efficiency and reduced thermal losses.
Designed to withstand harsh industrial conditions, the device supports operating temperatures from -55°C up to 150°C and complies with the automotive AEC-Q101 standard for quality and reliability assurance. Typical gate charge is 25.2 nC at a gate-source voltage of 25 V, and the maximum gate-source voltage tolerance is ±20 V, providing flexibility in driving gate circuits.
Its compact physical dimensions (3.35 mm length, 3.35 mm width, and 0.8 mm height) make it suitable for high-density electronic assembly, commonly used in industrial automation, automotive electronics, power supply circuits, and semiconductor manufacturing.
This device is ideal for switching and amplification tasks in industrial and automotive electronics. It supports surface mount technology, allowing efficient PCB integration. The product ensures high power dissipation capacity of 2.31 W for reliable operation under load.
Operating voltage ratings make it suitable for circuits requiring up to 100 V drain-source voltage. Temperature range and automotive qualification assure durability in demanding environments. For technical reference, this product supports robust design implementations in power management, electronic control units (ECUs), and embedded systems.
Explore more semiconductor components and discrete MOSFET devices in the Electronics & Electricals category at EnvMart for your industrial and electronic application needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 5.8 A.
This model has a maximum drain-source voltage rating of 100 V.
The typical forward voltage drop is 0.77 V, which helps optimize power efficiency.
The maximum power dissipation rating for this MOSFET is 2.31 W.
It features an 8-pin PowerDI3333 package designed for surface mounting applications.
The operating temperature ranges from -55°C to +150°C, making it suitable for harsh environments.
The maximum gate-source voltage is ±20 V, allowing for robust gate drive voltages.
The dimensions are 3.35 mm in length, 3.35 mm in width, and 0.8 mm in height.
It complies with the automotive AEC-Q101 standard, ensuring quality and reliability.
The typical gate charge is 25.2 nC at a gate-source voltage of 25 V.
This model utilizes an N-channel configuration, operating in enhancement mode.
It is commonly used in industrial automation, automotive electronics, power supply circuits, and semiconductor manufacturing.
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