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DiodesZetex N-Channel MOSFET 4 A, 30 V Enhancement Mode, 3-Pin SC-70 Package DMN3065LW-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model DMN3065LW-7
Width 1.35mm
Mount Type Surface
Series DMN3065LW
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 85mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 770mW
Typical Gate Charge Qg @ Vgs 11.7nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 1.2V

Key Features

  • Supports enhancement mode operation for controlled switching.
  • Features low maximum drain-source resistance of 85 milliohms for efficient conduction.
  • Maximum power dissipation rating of 770 milliwatts ensures reliability.
  • Operates safely over a wide temperature range from -55°C to 150°C.
  • Compact dimensions with a length of 2.2 mm, width of 1.35 mm, and height of 1 mm fit dense circuit boards.
  • Includes automotive grade AEC-Q101 certification for enhanced quality and reliability.
  • Typical gate charge of 11.7 nC allows fast switching performance.
  • Maximum gate-source voltage ranges between -12 V and +12 V for versatile control.

Product Description

DiodesZetex DMN3065LW-7 is a high-performance N-Channel MOSFET designed for power switching applications requiring up to 4 A continuous drain current and 30 V drain-source voltage. Packaged in a compact 3-pin SC-70 surface mount package, it offers reliable and efficient performance in compact electronic circuits.

With an enhancement mode channel, this MOSFET enables precise switching and control. Its maximum drain-source resistance of 85 milliohms minimizes power losses and enhances efficiency, making it suitable for power management, DC-DC converters, and automotive electronics.

The device supports continuous operation over a broad temperature range from -55°C to 150°C, ensuring stability and durability in demanding environments. Automotive-grade AEC-Q101 certification confirms its robustness and application in automotive electronics systems.

Its physical dimensions, measuring just 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allow for integration into highly dense printed circuit boards where space is critical. The typical gate charge of 11.7 nC supports fast switching frequency applications, while the gate-source voltage rating of -12 V to +12 V provides flexible driving conditions.

Ideal for applications in industrial power control, automotive electronics, consumer electronics, and embedded systems, the DMN3065LW-7 MOSFET offers a balance of compact size and robust electrical characteristics.

In summary, the DiodesZetex DMN3065LW-7 is a reliable surface mount power MOSFET for diverse electronic applications requiring efficient switching and thermal management. Supports enhancement mode operation for controlled switching.

Features low maximum drain-source resistance for efficient conduction. Maximum power dissipation rating of 770 milliwatts ensures reliability. Operates safely over a wide temperature range from -55°C to 150°C. Compact dimensions fit dense circuit boards.

Includes automotive grade AEC-Q101 certification for enhanced quality and reliability. Typical gate charge allows fast switching performance. Maximum gate-source voltage ranges for versatile control. Forward voltage supports efficient operation in power applications.

Surface mount design allows automated PCB assembly and space efficiency.

Explore the Electronics & Electricals category on EnvMart for more advanced MOSFETs and semiconductor components tailored to industrial, automotive, and consumer electronics applications.

DiodesZetex N-Channel MOSFET 4 A, 30 V Enhancement Mode, 3-Pin SC-70 Package DMN3065LW-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

It has a maximum drain-source voltage rating of 30 V.

This unit measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum power dissipation rating is 770 milliwatts.

The maximum gate-source voltage ranges between -12 V and +12 V.

The typical gate charge is 11.7 nC.

It operates safely over a wide temperature range from -55°C to 150°C.

It is packaged in a compact 3-pin SC-70 surface mount package.

Yes, it includes automotive grade AEC-Q101 certification.

The maximum drain-source resistance is 85 milliohms.

This model utilizes an N-channel enhancement mode.

It is suitable for applications in industrial power control, automotive electronics, consumer electronics, and embedded systems.

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