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Toshiba N-Channel Enhancement MOSFET 9.7 A 600 V TO-220 3-Pin TK10A60W5,S5VX(M
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK10A60W5,S5VX(M |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.7A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET features an N-Channel type suitable for enhancement mode applications.
- It supports a maximum continuous drain current of 9.7 amperes for robust performance.
- The maximum drain-source voltage rating is 600 volts ensuring high voltage tolerance.
- The TO-220 through-hole package type provides mechanical stability and ease of mounting.
- Maximum power dissipation is 30 watts allowing efficient thermal management.
- It operates reliably between -55°C to 150°C maximum operating temperatures.
- The device has a low maximum drain-source resistance of 450 milliohms for improved efficiency.
- The maximum gate-source voltage range is from -30 V to +30 V enhancing control flexibility.
Product Description
The Toshiba TK10A60W5,S5VX(M is a high-performance N-Channel Enhancement Mode MOSFET designed for robust power switching applications. It features a TO-220 package with 3 pins and a maximum continuous drain current (Id) of 9.7 amperes, suitable for industrial electronics requiring efficient power control.
With a maximum drain-source voltage (Vds) of 600 volts, this MOSFET supports high-voltage operations with enhanced reliability. The device operates on enhancement mode, which offers high efficiency in switching circuits and power amplification.
The TO-220 through-hole mounting style facilitates easy integration into printed circuit boards, providing secure physical mounting and thermal dissipation. The MOSFET maintains exceptional performance with a maximum power dissipation (Pd) of 30 watts and an operating temperature range extending from -55°C to 150°C, ensuring durability in demanding industrial and commercial environments.
Additional technical highlights include a low maximum drain-source resistance (Rds) of 450 milliohms for reduced conduction losses, and a gate-source voltage (Vgs) range of -30 V to +30 V allowing versatile gate drive configurations. The typical gate charge (Qg) is 25 nanocoulombs, influencing switching speeds and overall efficiency.
Compact physical dimensions of 10 mm length, 4.5 mm width, and 15 mm height make it suitable for space-constrained designs. The device is manufactured in Malaysia and complies with industry standards, although it has no specific automotive certification.
This MOSFET is ideal for industrial electronics, power supply circuits, and semiconductor applications requiring efficient high-voltage switching. The TO-220 package ensures ease of installation and thermal management. Wide operating temperature range suits harsh environments and extended use.
Designed for through-hole mounting in printed circuit boards. Its electrical characteristics support applications demanding rapid switching and low power loss. Explore the Electronics & Electricals category for more semiconductor and MOSFET solutions tailored to industrial, commercial, and manufacturing needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current (Id) of this MOSFET is 9.7 amperes, suitable for robust performance in power switching applications.
This model has a maximum drain-source voltage (Vds) rating of 600 volts, ensuring it can handle high-voltage operations effectively.
The MOSFET is packaged in a TO-220 type and is designed for through-hole mounting, which facilitates easy integration into printed circuit boards.
It operates reliably within a temperature range of -55°C to 150°C, making it suitable for various industrial environments.
The maximum power dissipation (Pd) is 30 watts, allowing for efficient thermal management in applications.
The maximum drain-source resistance (Rds) is 450 milliohms, which helps improve efficiency by reducing conduction losses.
The maximum gate-source voltage (Vgs) range is from -30 V to +30 V, providing flexibility in gate drive configurations.
The dimensions of this model are 10 mm in length, 4.5 mm in width, and 15 mm in height, making it compact for space-constrained designs.
The typical gate charge (Qg) is 25 nanocoulombs, which influences the switching speeds and overall efficiency of the device.
This device features an N-Channel type, which is suitable for enhancement mode applications in power switching.
The MOSFET is manufactured in Malaysia, adhering to industry standards for quality and performance.
It is ideal for industrial electronics, power supply circuits, and semiconductor applications requiring efficient high-voltage switching.
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