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DiodesZetex N-Channel MOSFET, 15.4 A, 30 V Enhancement Mode, 4-Pin SOT-223 Package DMN3032LE-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model DMN3032LE-13
Width 3.55mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 15.4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 35mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 11.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.7V

Key Features

  • This enhancement mode MOSFET supports a maximum continuous drain current of 15.4 amperes.
  • The maximum drain-source voltage is rated at 30 volts.
  • It features a low maximum drain-source resistance of 35 milliohms for efficient conduction.
  • This device uses a surface mount SOT-223 package with four pins for integration into circuits.
  • Maximum power dissipation capability is 1.8 watts allowing moderate heat handling.
  • Operating temperature range spans from -55°C to 150°C for rugged industrial use.
  • It complies with the automotive standard AEC-Q101 for reliability in automotive applications.
  • Typical gate charge is 11.3 nanocoulombs supporting fast switching.

Product Description

DiodesZetex DMN3032LE-13 is a high performance N-Channel MOSFET with an enhancement mode channel designed for surface mount applications. It delivers a maximum continuous drain current of 15.4 A and can withstand a maximum drain-source voltage of 30 V, supporting efficient and reliable switching in power electronic circuits.

Packaged in a compact 4-pin SOT-223, this MOSFET offers low on-resistance (35 mΩ max) and dissipates up to 1.8 W of power while operating within temperatures ranging from -55°C to 150°C, making it suitable for industrial, automotive, and power management systems.

The DMN3032LE-13 is compliant with the automotive AEC-Q101 standard, ensuring reliable operation in automotive electronics. Its low forward voltage of 0.7 V enhances circuit efficiency, while the moderate gate charge of 11.3 nC enables fast switching speeds. The surface mount design simplifies integration into compact PCB layouts.

Physical dimensions measure 6.55 mm in length, 3.55 mm in width, and 1.65 mm in height, suitable for space-constrained designs. Key applications include power regulation, load switching, and automotive electronics where durability and performance are required.

This enhancement mode N-Channel MOSFET supports a continuous drain current of 15.4 A. Maximum drain-source voltage rating is 30 V, suitable for low-voltage power circuits. It features a low maximum Rds(on) of 35 milliohms for reduced conduction losses.

Compact surface mount 4-pin SOT-223 package simplifies PCB integration. Maximum power dissipation of 1.8 watts allows moderate thermal management. Operation from -55°C to 150°C supports harsh environments and automotive use.

Certified to automotive AEC-Q101 standard ensuring reliability in vehicles. Typical gate charge of 11.3 nanocoulombs ensures effective switching. Physical dimensions: 6.55 mm length, 3.55 mm width, 1.65 mm height.

Ideal for use in industrial, automotive, power management, and electronic control systems. The product combines high current capacity with low voltage rating for effective switching in compact devices and PCBs.

EnvMart features a wide range of semiconductor devices including MOSFETs like this DiodesZetex DMN3032LE-13 model, ideal for engineers and professionals in electronics design and manufacturing.

DiodesZetex N-Channel MOSFET, 15.4 A, 30 V Enhancement Mode, 4-Pin SOT-223 Package DMN3032LE-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 15.4 A.

It has a maximum drain-source voltage rating of 30 V.

This MOSFET can dissipate up to 1.8 W of power.

The DMN3032LE-13 is packaged in a 4-pin SOT-223 surface mount package.

The operating temperature range spans from -55°C to 150°C.

It features a maximum drain-source resistance of 35 milliohms.

The typical gate charge is 11.3 nanocoulombs.

It complies with the automotive standard AEC-Q101.

The physical dimensions are 6.55 mm in length, 3.55 mm in width, and 1.65 mm in height.

The forward voltage is 0.7 V.

This model has an N-channel enhancement mode.

The maximum gate-source voltage is -20V to +20V.

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