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DiodesZetex P-Channel MOSFET 40 V 3.7 A Surface Mount 6-Pin SOT-26 ZXMP4A57E6TA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.3mm
Length 3.1mm
Model ZXMP4A57E6TA
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-26
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 150mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.7W
Typical Gate Charge Qg @ Vgs 15.8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.95V

Key Features

  • Features a P-Channel type conduction suitable for enhancement mode applications.
  • Maximum drain-source resistance of 150 milliohms ensuring efficient switching.
  • Capable of dissipating up to 1.7 W of power under operating conditions.
  • Typical gate charge of 15.8 nanocoulombs at specified gate voltage.
  • Wide operating temperature range from -55°C to 150°C, suitable for automotive use.
  • Complies with AEC-Q101 automotive standard ensuring reliability in demanding environments.
  • Supports maximum gate-source voltage of -20 V to +20 V.
  • Low forward voltage drop of -0.95 V for efficient conduction.

Product Description

DiodesZetex ZXMP4A57E6TA is a P-Channel MOSFET designed for high-performance switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 3.7 A and a drain-source voltage of 40 V, it is ideal for power management and control in automotive, industrial, and consumer electronic applications.

The device is encapsulated in a compact 6-pin SOT-26 surface mount package with small footprint dimensions: 3.1 mm length, 1.7 mm width, and 1.3 mm height, allowing for efficient PCB space utilization.

This MOSFET operates in enhancement mode, featuring a low maximum drain-source resistance (Rds) of 150 milliohms and a typical gate charge of 15.8 nC at the gate-source voltage specified, enabling fast switching operation with minimal energy loss.

It supports a wide temperature range from -55°C up to 150°C, making it highly reliable for harsh operating conditions, further validated by its compliance with the AEC-Q101 automotive standard.

Additional electrical characteristics include a maximum gate-source voltage range of -20 V to +20 V and a forward voltage drop of -0.95 V, contributing to efficient device performance.

Applications for this MOSFET include automotive electronics, power regulation modules, load switching, and protection circuits requiring compact, reliable semiconductor components.

Features a P-Channel enhancement mode configuration. Maximum continuous drain current of 3.7 A. Rated for drain-source voltage up to 40 V. Low on-resistance of 150 mΩ for reduced power loss. Surface mount SOT-26 package with 6 pins.

Wide operating temperature from -55°C to 150°C. Meets AEC-Q101 automotive quality standards. Compact physical dimensions supporting dense PCB layout. Typical gate charge of 15.8 nC at specified Vgs. Maximum power dissipation of 1.7 W.

Explore extensive selections of discrete semiconductors at EnvMart for your industrial and automotive electronic solutions.

DiodesZetex P-Channel MOSFET 40 V 3.7 A Surface Mount 6-Pin SOT-26 ZXMP4A57E6TA
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Frequently Asked Questions

The maximum continuous drain current for the ZXMP4A57E6TA is 3.7 A.

This model is rated for a maximum drain-source voltage of 40 V.

The maximum drain-source resistance (Rds) is 150 milliohms, ensuring efficient switching.

The typical gate charge for this model is 15.8 nanocoulombs.

It operates within a wide temperature range from -55°C to 150°C.

The ZXMP4A57E6TA is encapsulated in a surface mount SOT-26 package.

The forward voltage drop is -0.95 V, contributing to efficient conduction.

It complies with the AEC-Q101 automotive standard, ensuring reliability in demanding environments.

The SOT-26 package has 6 pins.

The maximum power dissipation is rated at 1.7 W under operating conditions.

The maximum gate-source voltage range is -20 V to +20 V.

This model features a P-Channel type configuration suitable for enhancement mode applications.

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