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DiodesZetex N-Channel MOSFET, 30 V, 940 mA, 3-Pin SOT-23 Surface Mount DMN3730U-7

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DiodesZetex N-Channel MOSFET, 30 V, 940 mA, 3-Pin SOT-23 Surface Mount DMN3730U-7

Name: DiodesZetex N-Channel MOSFET, 30 V, 940 mA, 3-Pin SOT-23 Surface Mount DMN3730U-7
Brand: DiodesZetex
SKU: 316049
Price: 0.24 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMN3730U-7
Width	1.4mm
Mount Type	Surface
Series	DMN3730U
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	940mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	730mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	710mW
Typical Gate Charge Qg @ Vgs	1.6nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	0.7V

Key Features

High-performance N-Channel MOSFET suitable for surface mount applications.
Maximum drain-source voltage of 30 volts for efficient switching.
Low Rds(on) of 730 milliohms to minimize conduction losses.
Typical gate charge of 1.6 nanocoulombs for fast switching speeds.
Maximum power dissipation of 710 milliwatts supporting thermal reliability.
Operating temperature range from -55°C to +150°C for wide environmental use.
Automotive standard AEC-Q101 qualified ensuring high reliability.
Package type SOT-23 enables easy PCB mounting and efficient assembly.

Product Description

DiodesZetex DMN3730U-7 is an N-Channel MOSFET designed for surface mount technology applications in electronic circuits requiring efficient switching and low power dissipation. Rated for a maximum continuous drain current of 940 mA and drain-source voltage of 30 V, this device incorporates a 3-pin SOT-23 package offering compact physical dimensions suitable for high-density PCB layouts.

This MOSFET features a low on-resistance (Rds(on)) of 730 milliohms and a typical gate charge of 1.6 nC at Vgs, enabling fast switching with minimal energy loss. It supports a maximum power dissipation of 710 milliwatts ensuring thermal stability in demanding environments.

Operating within a temperature range of -55°C up to 150°C, it meets robust automotive standards such as AEC-Q101, demonstrating reliability under automotive-grade stresses and cyclic thermal conditions. The package dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate optimized PCB space utilization.

Typical applications include power management, load switching, and high efficiency DC-DC converters in industrial, automotive, and consumer electronics sectors. Its enhancement-mode channel supports precise control enabling efficient power switching and circuit protection.

High-performance N-Channel MOSFET suitable for surface mount applications. Maximum drain-source voltage of 30 volts for efficient switching. Low Rds(on) of 730 milliohms to minimize conduction losses. Typical gate charge of 1.6 nanocoulombs for fast switching speeds.

Maximum power dissipation of 710 milliwatts supporting thermal reliability. Operating temperature range from -55°C to +150°C for wide environmental use. Compact dimensions: 3 mm length, 1.4 mm width, and 1.1 mm height. Automotive standard AEC-Q101 qualified ensuring high reliability.

Package type SOT-23 enables easy PCB mounting and efficient assembly. Designed for enhancement mode switching applications. Explore the full range of DiodesZetex MOSFETs and related semiconductor components available at EnvMart for your electronic design and manufacturing needs.