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DiodesZetex N-Channel Enhancement MOSFET 600 mA 60 V TO-92 Through Hole 3-Pin ZVN4206AV
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVN4206AV |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | ZVN4206A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed as an N-Channel Enhancement MOSFET suitable for switching applications.
- Operates with a maximum power dissipation of 700 mW.
- Through-hole mount type ensures easy PCB installation.
- Maximum drain-source resistance of 1.5 ohms for efficient conductivity.
- Wide operating temperature range from -55°C to 150°C enhances reliability.
- Equipped with maximum gate-source voltage of -20 V to +20 V.
- Complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.
Product Description
DiodesZetex ZVN4206AV is an N-Channel Enhancement MOSFET designed for discrete semiconductor applications, providing reliable performance with a maximum continuous drain current of 600 mA and a drain-source voltage rating of 60 V.
This MOSFET is housed in a compact 3-pin TO-92 package, allowing for easy through-hole mounting on printed circuit boards. Its low maximum drain-source resistance of 1.5 ohms ensures low power loss and efficient switching capabilities for various electronic circuits.
Featuring a broad operating temperature range from -55°C to 150°C, the ZVN4206AV is suitable for demanding environmental conditions typically found in automotive and industrial settings. The device can tolerate gate-source voltages between -20 V and +20 V, enhancing its robustness in diverse applications.
With a maximum power dissipation rating of 700 mW, this MOSFET supports moderate power load operations and is compliant with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200, assuring quality and safety in automotive electronics.
Its physical compactness with length 4.77 mm, width 2.41 mm, and height 4.01 mm facilitates integration into space-constrained designs. Typical use cases include power management, switching circuits, and signal amplification in industrial control, automotive electronics, communication equipment, and consumer electronics.
Designed as an N-Channel Enhancement MOSFET suitable for switching applications. Operates with a maximum power dissipation of 700 mW. Through-hole mount type ensures easy PCB installation. Maximum drain-source resistance of 1.5 ohms for efficient conductivity.
Wide operating temperature range from -55°C to 150°C enhances reliability. Equipped with maximum gate-source voltage of -20 V to +20 V. Compact dimensions: length 4.77 mm, width 2.41 mm, height 4.01 mm. Complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.
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Frequently Asked Questions
The maximum continuous drain current for this model is 600 mA.
The maximum drain-source voltage rating is 60 V.
It operates with a maximum power dissipation of 700 mW.
The dimensions are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.
The operating temperature range is from -55°C to 150°C.
This model uses a through-hole mount type for easy PCB installation.
The maximum gate-source voltage is -20 V to +20 V.
The maximum drain-source resistance is 1.5 ohms.
It complies with automotive standards AEC-Q101, AEC-Q100, and AEC-Q200.
The channel type is N-Channel Enhancement.
This MOSFET is suitable for power management, switching circuits, and signal amplification in various electronics.
It comes in a TO-92 package type.
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