Vishay N-Channel Power MOSFET 20 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50C-E3

The Vishay SIHG20N50C-E3 is a robust N-Channel Power MOSFET designed for high voltage and high current electronic switching and amplification applications. With a maximum continuous drain current rating of 20 A and rated for drain-source voltages up to 500 V, this component suits demanding industrial and power management tasks.

This device features an enhancement mode channel, providing reliable switching with a low maximum drain-source resistance of 0.27 ohms, optimizing energy efficiency and reducing heat generation. The MOSFET is housed in a three-pin TO-247AC package, which supports through-hole mounting, facilitating secure and easy integration into printed circuit boards.

It offers a maximum power dissipation capacity of 250 W, supporting heavy duty operation in industrial, automotive, and power supply applications. The typical gate charge is rated at 76 nC at Vgs, enabling quick switching transitions that are crucial in high-frequency circuit designs.

The SIHG20N50C-E3 is designed to operate within a temperature range of -55°C to 150°C, allowing for versatile deployment in harsh environmental conditions. Its gate-source voltage tolerance ranges from -30 V to +30 V, adding protection and enhancing the device's durability.

Its physical dimensions of 15.87 mm length, 5.31 mm width, and 20.82 mm height make it compatible with a variety of design form factors. The component is compliant with RoHS and IEC standards, confirming environmentally responsible manufacture and high-quality engineering.

Maximum continuous drain current of 20 A. Maximum drain-source voltage rated at 500 V. Low drain-source resistance of 0.27 Ω for reduced power loss. Supports power dissipation up to 250 W. Wide operating temperature range from -55°C to 150°C.

Fast switching enabled by typical gate charge of 76 nC. TO-247AC package with 3 pins for through-hole mounting. Complies with RoHS and IEC 61249-2-21 standards.

This power MOSFET is ideal for industrial, electronic components, power management, semiconductor, and discrete semiconductor applications that demand efficiency, high switching speed, and durability. It is suitable for integration in power supplies, motor control, and other high-power switching environments.

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