Vishay P-Channel MOSFET 30 V, 760 mA, Enhancement Mode, 6-Pin SC-89 Package SI1077X-T1-GE3

The Vishay SI1077X-T1-GE3 is a P-Channel MOSFET designed for discrete semiconductor applications requiring surface mount technology. Its 6-pin SC-89 package makes it ideal for compact electronic circuits where space and efficiency are critical.

Supporting a maximum continuous drain current of 760 mA and a drain-source voltage up to 30 V, this device offers dependable performance in switching and amplification circuits. The enhancement mode channel enables effective gate control with a typical gate charge of 4.43 nC at the standard gate-source voltage.

Its maximum drain-source resistance of 244 milliohms contributes to reduced energy loss, making it suitable for power-sensitive and efficient electronic designs. The MOSFET can operate safely in a wide temperature range from -55°C up to 150°C, allowing its use in rigorous industrial, commercial, and laboratory environments.

The device's physical package dimensions are compact, measuring 1.7 mm in length, 1.2 mm in width, and 0.6 mm in height, facilitating high-density PCB layouts. Its maximum power dissipation of 236 mW guarantees stable functioning under moderate power conditions.

This MOSFET is commonly used in power management, signal switching, and amplification stages of electronic assemblies in various domains including industrial automation, consumer electronics, instrumentation, and manufacturing equipment.

Key features include low forward voltage drop of -1.2 V and capability to withstand gate-source voltages of -12 V to +12 V, ensuring robustness in dynamic operating conditions. Features a 6-Pin SC-89 package optimized for surface mounting.

Maximum drain-source resistance of 244 milliohms ensures efficient switching. Operates within a temperature range from -55°C to 150°C. Typical gate charge of 4.43 nC at specified gate-source voltage allows for swift response.

Maximum power dissipation rated at 236 mW supports stable operation under load. Maximum gate-source voltage rating is ±12 V to withstand voltage stress. Compact dimensions with length 1.7 mm, width 1.2 mm, and height 0.6 mm for space-saving PCB designs.

Suitable for electronic component applications requiring reliable discrete MOSFET functionality.

This product is part of the Vishay Si1077X series, known for quality and reliability in electronic semiconductor solutions. Explore our Electronics & Electricals category for more semiconductor devices and MOSFET variants from leading manufacturers.