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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMN3018SSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 30mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Single |
DiodesZetex DMN3018SSD-13 is a single N-Channel MOSFET designed for high-performance semiconductor applications. It features a maximum continuous drain current of 8.7 A and can withstand a maximum drain-source voltage of 30 V, making it suitable for various power control and switching applications.
This device is packaged in an 8-pin SOIC surface-mount housing, ideal for compact and efficient circuit board layouts in industrial, automotive, consumer electronics, and power management systems.
The enhancement-mode channel ensures reliable transistor switching with a typical gate charge of 6 nC at Vgs, enabling fast response and efficient operation. The MOSFET also offers a low drain-source resistance of 30 milliohms, which helps minimize power loss during conduction.
Operating within a wide temperature range from -55°C to +150°C, it meets stringent quality and safety standards, including AEC-Q101 for automotive-grade products, MIL-STD-202 for environmental testing, UL 94V-0 for flammability, RoHS compliance, and J-STD-020 for soldering requirements.
Surface mount SOIC 8-pin package for space-saving design. Handles continuous drain current up to 8.7 A. Maximum drain-source voltage rating of 30 V supports diverse power circuits. Low Rds(on) of 30 milliohms enhances energy efficiency.
Robust power dissipation rating of 1.5 W for durability. Wide operating temperature range suitable for harsh environments. Conforms to multiple industrial and automotive standards for reliability. Compact physical size with height 1.5 mm, length 4.95 mm, width 3.95 mm.
Single transistor configuration optimized for discrete semiconductor applications. This MOSFET is widely used in industrial automation, power control modules, consumer electronics, and automotive electronics due to its high performance and reliability standards.
Explore a broad range of discrete semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.
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