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DiodesZetex Single 1 N-Channel MOSFET, 8.7 A Drain Current, 30 V Drain-Source Voltage, 1.5 W Power DMN3018SSD-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMN3018SSD-13
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, J-STD-020
Pin Count 8
Number of Elements per Chip 1
Channel Type N
Maximum Continuous Drain Current Id 8.7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 30mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
Transistor Configuration Single

Key Features

  • Surface mount device with SOIC package type for efficient PCB integration.
  • Enhancement-mode channel configuration providing reliable switching.
  • Maximum power dissipation of 1.5 W ensuring durable operation.
  • Operating temperature range from -55°C minimum to +150°C maximum.
  • Low drain-source resistance of 30 milliohms for high efficiency.
  • Gate-source voltage rating of -20 V to +20 V for versatile control.
  • Typical gate charge of 6 nC enabling fast switching performance.
  • Compliance with AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, and J-STD-020 standards.

Product Description

DiodesZetex DMN3018SSD-13 is a single N-Channel MOSFET designed for high-performance semiconductor applications. It features a maximum continuous drain current of 8.7 A and can withstand a maximum drain-source voltage of 30 V, making it suitable for various power control and switching applications.

This device is packaged in an 8-pin SOIC surface-mount housing, ideal for compact and efficient circuit board layouts in industrial, automotive, consumer electronics, and power management systems.

The enhancement-mode channel ensures reliable transistor switching with a typical gate charge of 6 nC at Vgs, enabling fast response and efficient operation. The MOSFET also offers a low drain-source resistance of 30 milliohms, which helps minimize power loss during conduction.

Operating within a wide temperature range from -55°C to +150°C, it meets stringent quality and safety standards, including AEC-Q101 for automotive-grade products, MIL-STD-202 for environmental testing, UL 94V-0 for flammability, RoHS compliance, and J-STD-020 for soldering requirements.

Surface mount SOIC 8-pin package for space-saving design. Handles continuous drain current up to 8.7 A. Maximum drain-source voltage rating of 30 V supports diverse power circuits. Low Rds(on) of 30 milliohms enhances energy efficiency.

Robust power dissipation rating of 1.5 W for durability. Wide operating temperature range suitable for harsh environments. Conforms to multiple industrial and automotive standards for reliability. Compact physical size with height 1.5 mm, length 4.95 mm, width 3.95 mm.

Single transistor configuration optimized for discrete semiconductor applications. This MOSFET is widely used in industrial automation, power control modules, consumer electronics, and automotive electronics due to its high performance and reliability standards.

Explore a broad range of discrete semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.

DiodesZetex Single 1 N-Channel MOSFET, 8.7 A Drain Current, 30 V Drain-Source Voltage, 1.5 W Power DMN3018SSD-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 8.7 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The typical gate charge for the DMN3018SSD-13 is 6 nC at Vgs.

It has a maximum power dissipation rating of 1.5 W.

The dimensions are 1.5 mm in height, 4.95 mm in length, and 3.95 mm in width.

The operating temperature range is from -55°C to +150°C.

This model comes in an 8-pin SOIC surface-mount package.

It complies with AEC-Q101, MIL-STD-202, UL 94V-0, RoHS, and J-STD-020 standards.

The low drain-source resistance is 30 milliohms.

The gate-source voltage rating is from -20 V to +20 V.

It features an enhancement-mode channel configuration.

This MOSFET is suitable for power control and switching applications in industrial, automotive, consumer electronics, and power management systems.

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