DiodesZetex N-Channel MOSFET, 1.4 A, 12 V, Enhancement Mode, 3-Pin X1-DFN Package DMN1150UFB-7B

DiodesZetex DMN1150UFB-7B is an N-Channel enhancement mode MOSFET designed for reliable performance in semiconductor applications requiring up to 1.4 A continuous drain current and 12 V drain-source voltage. Packaged in a compact 3-pin X1-DFN surface mount enclosure, it offers effective space utilization on modern PCBs.

This MOSFET features a low maximum drain-source resistance of 210 milliohms to minimize conduction losses and supports power dissipation up to 500 milliwatts, compatible with moderate power devices.

The device operates over a wide temperature range from -55 degrees Celsius up to 150 degrees Celsius, ensuring robustness in industrial, automotive, and electronic equipment environments. It also meets the AEC-Q101 automotive standard, certifying its suitability for automotive systems where reliability is critical.

Fast switching is enabled by a typical gate charge of 1.5 nanocoulombs at gate-source voltage, while the gate voltage tolerance ranges from -6 volts to +6 volts, providing stable control and switching characteristics for various circuit designs.

Its extremely compact dimensions (1.08 mm length, 0.68 mm width, and 0.48 mm height) make the DMN1150UFB-7B ideal for space-constrained applications such as portable electronic devices, embedded systems, and precision power control modules.

Maximum continuous drain current: 1.4 A. Drain-source voltage rating: 12 V. Drain-source resistance (Rds): 210 mΩ maximum. Package type: 3-pin X1-DFN surface mount. Power dissipation: 500 mW maximum. Operating temperature range: -55°C to 150°C.

Typical gate charge: 1.5 nC. Meets automotive standard AEC-Q101. Compact package dimensions for space saving.

This product is primarily used in semiconductors, electronic components manufacturing, automotive electronic systems, industrial control circuits, and power management applications. It benefits designers who need a compact, reliable, and efficient MOSFET device for low voltage operating environments.

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