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STMicroelectronics MDmesh N-Channel Enhancement MOSFET, 20 A, 600 V, 3-Pin TO-247 Package STW26NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW26NM60N |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 20 A supports high current loads.
- Drain-source voltage rated at 600 V ensures high voltage operation.
- TO-247 package with through-hole mount and 3 pins facilitates easy board integration.
- Low drain-source resistance of 165 milliohms reduces conduction losses.
- Enhancement mode channel provides efficient switching control.
- Maximum gate-source voltage tolerance of -25 to +25 V offers robust gate protection.
- Forward voltage drop of 1.3 V enhances power efficiency.
- High power dissipation capability of 140 W supports demanding conditions.
Product Description
STMicroelectronics STW26NM60N MDmesh N-Channel MOSFET is designed for industrial and commercial power switching and control applications. This enhancement mode transistor safely handles continuous drain currents up to 20 A and maximum drain-source voltages of 600 V, making it suitable for medium to high power environments.
Housed in a sturdy 3-pin TO-247 package with through-hole mounting, the STW26NM60N is easy to incorporate into power conversion, motor drives, and electronic switching circuits. Its low Rds(on) resistance of 165 milliohms minimizes power losses and heat generation.
The MOSFET also tolerates gate-source voltages ranging from -25 V to +25 V, providing reliable gating control and robust performance under varying electrical conditions. With a forward voltage drop of 1.3 V and power dissipation capability of 140 W, this device ensures efficient energy management and durability.
Operation is guaranteed within an extended temperature range from -55°C to 150°C, allowing usage in harsh or industrial environments. The compact physical dimensions (15.75 mm x 5.15 mm x 20.15 mm) support space-efficient designs on circuit boards.
Maximum continuous drain current 20 A for high current applications. Drain-source voltage up to 600 V for robust voltage handling. TO-247 package with 3 pins; through-hole mount for ease of installation. Low on-resistance reduces conduction losses and heating.
Enhancement mode N-channel transistor ensures responsive switching. Gate-source voltage maximum limits provide stable control. Forward voltage 1.3 V supports efficient operation. Power dissipation of 140 W suits demanding workloads.
Wide operating temperature range from -55°C to 150°C for reliability. Compact size for versatile use in electronic designs.
This MOSFET is ideal for industrial power electronics, semiconductor applications, motor controllers, power supplies, and other electronic component systems requiring reliable high-voltage switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 600 V, allowing it to handle high voltage applications effectively.
It is housed in a TO-247 package with a through-hole mount, facilitating easy integration into circuit boards.
The low drain-source resistance is 165 milliohms, which helps reduce conduction losses during operation.
The maximum gate-source voltage tolerance is -25 V to +25 V, providing robust gate protection.
The forward voltage drop for this model is 1.3 V, enhancing its power efficiency during operation.
It has a maximum power dissipation capability of 140 W, supporting demanding operational conditions.
This MOSFET operates within an extended temperature range from -55°C to 150°C, making it suitable for harsh environments.
The dimensions of this model are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
This model features an enhancement mode N-channel, which provides efficient switching control.
It is designed for industrial power electronics, motor controllers, power supplies, and other electronic component systems requiring reliable high-voltage switching.
The country of origin for this model is India.
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