DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET 840mA 20V Enhancement 6-Pin SC-88 DMG1016UDW-7

DiodesZetex DMG1016UDW-7 is a dual isolated N-Channel and P-Channel MOSFET transistor designed for efficient switching applications in electronic circuits. Offering a maximum continuous drain current of 840mA and a drain-source voltage rating of 20V, it is suitable for low-power industrial, automotive, and commercial applications where compact size and reliable performance are critical.

The device features a compact surface mount SC-88 package with 6 pins, facilitating high-density PCB layouts and automated assembly processes. Its low on-resistance of 1.5mΩ minimizes power loss, improving overall efficiency. Thermal and electrical robustness is ensured with a maximum power dissipation of 330mW and wide operating temperature range from -55°C to +150°C.

This MOSFET supports enhancement mode operation characterized by its typical gate charge of 736.6nC, allowing rapid switching. The device meets automotive quality standards such as AEC-Q101 and general certifications including RoHS and MIL-STD-202 for durability and environmental compliance.

Physical dimensions of 2.2mm length, 1.35mm width, and 1mm height make the DMG1016UDW-7 ideal for compact devices requiring reliable switching components. The transistor configuration is isolated with 2 elements per chip, providing dual channel functionality in a single package.

Common applications include power management, signal switching, small motor controls, and electronic load switching in industrial controls, automotive electronics, and instrumentation. It is manufactured in China under strict quality standards ensuring component performance and consistency.

The device has a surface mount SC-88 package with 6 pins for compact PCB integration. Maximum continuous drain current is 840mA suitable for low-power electronic circuits. Maximum drain-source voltage rating is 20V providing robust switching capabilities.

Thermal dissipation is rated at 330mW with operating temperature range from -55°C to +150°C. Typical gate charge of 736.6nC enables efficient switching performance. The product conforms to automotive and industrial standards including AEC-Q101 and MIL-STD-202.

Small physical dimensions: length 2.2mm, width 1.35mm, height 1mm for space-saving applications. The MOSFET offers enhancement mode operation with low Rds(on) of 1.5mΩ ensuring low conduction losses. Maximum gate-source voltage rating of ±6V ensures device reliability under control voltages.

Manufactured in China under RoHS compliance and recognized certifications including UL 94V-0.

For reliable MOSFET solutions meeting industrial and automotive standards, browse the DiodesZetex collection at EnvMart for a range of semiconductor components designed for advanced electronics and power management applications.