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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 800μm |
| Length | 1.7mm |
| Model | DMG1013T |
| Width | 850μm |
| Mount Type | Surface |
| Series | DMG1013T |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 460mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270mW |
| Typical Gate Charge Qg @ Vgs | 0.58nC |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMG1013T is a P-Channel MOSFET designed for semiconductor applications requiring efficient switching at currents up to 460 mA and drain-source voltages up to 20 V. Packaged in a compact 3-pin SC-89 surface mount format, this device is suited for space-constrained environments.
It operates in enhancement channel mode, providing reliable and precise control for electronic circuits. The maximum power dissipation of 270 mW supports moderate power applications while maintaining thermal stability across its operating temperature range of -55°C to 150°C.
This MOSFET features a typical gate charge of only 0.58 nC at a gate-source voltage, reducing switching losses and improving efficiency in high-frequency operations. Its low maximum on-resistance (Rds(on)) of 1.3 ohms minimizes conduction losses, enhancing overall device performance.
Dimensions measuring 1.7 mm length, 850 μm width, and 800 μm height allow it to fit well in compact PCB layouts. Additionally, the device complies with the AEC-Q101 automotive standard, making it suitable for automotive and industrial use cases requiring high reliability.
Applications include electronic component replacements, power management, discrete semiconductor usage, and integration in automotive electronic systems. The device is surface mount compatible and supports efficient power switching in small form-factor devices.
This MOSFET operates in enhancement channel mode for effective switching. Maximum continuous drain current is 460 mA. Maximum drain-source voltage is 20 V. Maximum power dissipation of 270 mW supports compact designs. Operating temperature range: -55°C to 150°C.
Low typical gate charge of 0.58 nC improves efficiency. Maximum drain source resistance of 1.3 ohms. Complies with automotive standard AEC-Q101.
This product is sourced from China and supplied as new condition. It represents a reliable choice for industrial, automotive, and electronic manufacturing applications requiring compact and efficient P-channel MOSFETs. Explore more MOSFETs and semiconductor components at EnvMart.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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