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DiodesZetex Isolated Dual Type P and Type N-Channel Enhancement Mode MOSFET 20 V, 540 mA, 6-Pin SC-88 DMC2004DWK-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | DMC2004DWK-7 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | AEC-Q101, MIL-STD-202, RoHS, J-STD-020, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 540mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Maximum Gate Source Voltage Vgs | 8, -8V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features an isolated transistor configuration with dual channel elements per chip.
- It supports a maximum continuous drain current of 540 mA and a maximum drain-source voltage of 20 V.
- The transistor operates in enhancement mode with a maximum drain-source resistance of 900 mΩ.
- It is housed in a 6-pin surface-mount SC-88 package for compact PCB designs.
- Designed for robust operation from -65 °C to +150 °C, it meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101.
- Additional features include low forward voltage drop (1.2 V) and a maximum power dissipation of 250 mW.
Product Description
DiodesZetex DMC2004DWK-7 is an isolated MOSFET transistor featuring dual type P and type N-channel elements designed for enhancement mode operation. Operating at a maximum drain-source voltage of 20 V and supporting continuous drain currents up to 540 mA, this transistor is ideal for sensitive and precise switching applications in electronic circuits.
The device comes in a compact 6-pin SC-88 surface-mount package with dimensions measuring approximately 2.2 mm length, 1.35 mm width, and 1 mm height, making it suitable for high-density circuit board layouts.
Designed for durability, it supports a wide operational temperature range from -65 °C to +150 °C, meeting stringent automotive and industrial standards such as AEC-Q200, AEC-Q100, AEC-Q101, MIL-STD-202, RoHS compliance, J-STD-020, and UL 94V-0. Its isolated transistor configuration ensures minimal electrical interference, enhancing signal integrity in complex electronic designs.
Key electrical specifications include a maximum drain-source resistance of 900 mΩ and a maximum gate-source voltage rating of ±8 V. With a forward voltage of 1.2 V and maximum power dissipation of 250 mW, it supports efficient power management with minimal losses.
This MOSFET transistor is widely applicable in automotive electronics, power management circuits, signal processing, and surface-mount technology assemblies where compact size and reliable performance are critical.
This MOSFET features an isolated transistor configuration with dual channel elements per chip. It supports a maximum continuous drain current of 540 mA and a maximum drain-source voltage of 20 V. The transistor operates in enhancement mode with a maximum drain-source resistance of 900 mΩ.
It is housed in a 6-pin surface-mount SC-88 package for compact PCB designs. Designed for robust operation from -65 °C to +150 °C, it meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101. Additional features include low forward voltage drop (1.2 V) and a maximum power dissipation of 250 mW.
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Frequently Asked Questions
The maximum continuous drain current for this model is 540 mA.
It supports a maximum drain-source voltage of 20 V.
The maximum drain-source resistance is 900 mΩ.
The SC-88 package has dimensions of approximately 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
It operates within a temperature range of -65 °C to +150 °C.
This model meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101.
The maximum power dissipation is 250 mW.
It features an isolated transistor configuration with dual type P and type N-channel elements.
The forward voltage drop is 1.2 V.
The maximum gate-source voltage rating is ±8 V.
This MOSFET is suitable for automotive electronics, power management circuits, and signal processing.
It complies with RoHS, J-STD-020, and UL 94V-0 standards.
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