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DiodesZetex P-Channel MOSFET 4-Pin SOT-223 3.7 A 70 V Enhancement ZXMP7A17GTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.7mm
Model ZXMP7A17GTA
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 70V
Maximum Drain Source Resistance Rds 250mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.9W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.85V

Key Features

  • This enhancement mode MOSFET features surface mount package type SOT-223.
  • It has a low maximum drain-source resistance of 250 milliohms ensuring efficient power management.
  • The device supports a typical gate charge of 18 nanocoulombs for fast switching.
  • Maximum power dissipation is 3.9 watts suitable for medium power electronic applications.
  • Operational temperature ranges from -55°C minimum to 150°C maximum for reliable performance.
  • Package dimensions are compact with length 6.7 mm, width 3.7 mm, and height 1.8 mm.
  • Designed to meet automotive standard AEC-Q101 ensuring quality and durability.
  • Maximum gate-source voltage rating is -20 V to +20 V limiting gate voltage stress.

Product Description

DiodesZetex ZXMP7A17GTA is a high-performance P-Channel MOSFET designed for discrete semiconductor applications requiring an enhancement mode transistor with reliable switching and power handling capabilities. It is housed in a compact 4-pin SOT-223 surface mount package, making it suitable for modern PCB assembly in power management circuits.

This device supports a maximum continuous drain current of 3.7 amperes and withstands a maximum drain-source voltage of 70 volts, making it ideal for mid-level power electronic designs. The low maximum drain-source resistance of 250 milliohms helps reduce conduction losses, improving efficiency in power conversion and switching applications.

The typical gate charge of 18 nanocoulombs allows for fast switching speeds, while the maximum power dissipation of 3.9 watts ensures stable operation under load. It is engineered to operate reliably across a wide temperature range from -55°C up to 150°C, suitable for harsh environmental conditions.

Package dimensions of length 6.7 mm, width 3.7 mm, and height 1.8 mm allow for compact PCB layouts. The device complies with automotive standard AEC-Q101, certifying its suitability for automotive electronics that demand robust components.

The gate source voltage limits of -20 to +20 volts safeguard the device's gate oxide from voltage stress, and a forward voltage of -0.85 volts contributes to reducing power losses in conduction mode.

This MOSFET is used broadly in industrial, automotive, electronic, and laboratory power control systems. Applications include power switching, load switching, voltage regulation, and DC-DC converters. Its surface mount form factor allows for high-density circuit design in device manufacturing.

Choose this MOSFET for dependable P-Channel transistor performance in demanding electrical and electronic projects. Explore other DiodesZetex semiconductor products on EnvMart for complementary components.

DiodesZetex P-Channel MOSFET 4-Pin SOT-223 3.7 A 70 V Enhancement ZXMP7A17GTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.7 amperes.

It has a maximum drain-source voltage rating of 70 volts.

This MOSFET is housed in a SOT-223 surface mount package with dimensions of 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The maximum power dissipation for this model is 3.9 watts.

The typical gate charge for this device is 18 nanocoulombs.

It operates reliably within a temperature range from -55°C to 150°C.

This model complies with the automotive standard AEC-Q101.

The maximum gate-source voltage rating is -20 V to +20 V.

The maximum drain-source resistance is 250 milliohms.

The forward voltage for this model is -0.85 volts.

This device features a P-channel type channel.

This MOSFET is suitable for applications such as power switching, load switching, voltage regulation, and DC-DC converters.

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