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Infineon IAUZ N-Channel MOSFET, 120 A, 40 V, Enhancement Mode, 8-Pin SuperSO8 Package IAUZ20N08S5L300ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IAUZ20N08S5L300ATMA1
Mount Type Surface
Series IAUZ
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • This MOSFET features enhancement mode operation with a logic level gate drive.
  • The package type is SuperSO8 measuring 5 mm x 6 mm, with 8 pins for surface mounting.
  • The device provides a low maximum drain-source resistance (Rds) of 1.4 milliohm.
  • Maximum power dissipation rating of 81 W allows for efficient thermal management in applications.
  • It operates reliably between temperatures of -55°C and up to 175°C.
  • The gate-source voltage maximum limit is 20 V for protective operation.
  • The device is fully AEC-Q101 qualified for automotive quality standards.
  • Typical gate charge at 80 nC ensures efficient switching performance.

Product Description

Infineon IAUZ20N08S5L300ATMA1 N-Channel MOSFET is a high-performance OptiMOS power transistor designed primarily for automotive applications, offering high current capacity and robust voltage handling.

With a maximum continuous drain current of 120 A and drain-source voltage rating of 40 V, it supports demanding power switching tasks with high efficiency and minimal conduction losses due to its low Rds value of 1.4 milliohm.

The device is housed in a compact 8-pin SuperSO8 surface-mount package measuring 5 x 6 mm, allowing for easy integration in high-density PCB layouts.

Its enhancement mode operation and logic-level gate provide compatibility with standard control circuits, making it ideal for automotive motor drives, DC-DC converters, and load switching.

The MOSFET is qualified to AEC-Q101 standards, guaranteeing reliability and robustness required in automotive electronics, and has a wide operating temperature range from -55°C to 175°C ensuring performance under harsh conditions.

Maximum power dissipation is rated at 81 W, facilitating effective thermal management in embedded systems. Additional technical parameters like maximum gate-source voltage of 20 V and a typical gate charge of 80 nC ensure superior switching characteristics.

This MOSFET is RoHS compliant, contributing to environmentally responsible electronics manufacturing. Its automotive-grade certification further ensures suitability for use in modern vehicle electronics systems. The device is 100% avalanche tested to enhance operational safety and device integrity under transient conditions.

It excels in a wide range of industrial electronic applications beyond automotive, including power management and energy systems. Choose Infineon IAUZ20N08S5L300ATMA1 for critical industrial, automotive, and power semiconductor applications requiring robust and efficient N-channel MOSFET solutions.

Explore more semiconductor and MOSFET products in the Electronics & Electricals category at EnvMart.

Infineon IAUZ N-Channel MOSFET, 120 A, 40 V, Enhancement Mode, 8-Pin SuperSO8 Package IAUZ20N08S5L300ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 120 A.

It has a maximum drain-source voltage rating of 40 V.

This MOSFET is housed in a SuperSO8 package measuring 5 mm x 6 mm.

The maximum power dissipation rating for this unit is 81 W.

It operates reliably between temperatures of -55°C and 175°C.

The maximum gate-source voltage limit is 20 V.

The typical gate charge at Vgs is 80 nC, which ensures efficient switching performance.

Yes, it is fully AEC-Q101 qualified for automotive quality standards.

The maximum drain-source resistance (Rds) is 1.4 milliohm.

This model supports surface mounting with 8 pins.

The device is RoHS compliant, contributing to environmentally responsible electronics manufacturing.

It is suitable for automotive motor drives, DC-DC converters, and load switching applications.

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