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Infineon N-Channel MOSFET 330 A 40 V 8-Pin SuperSO8 5x6 ISC019N03L5SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISC019N03L5SATMA1 |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 330A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features a SuperSO8 5 x 6 package with 8 pins for surface mounting.
- Maximum drain-source resistance of 1.4 milliohms ensures efficient conduction.
- Typical gate charge of 80 nanocoulombs at Vgs provides fast switching capability.
- Supports maximum power dissipation of 81 W for high thermal performance.
- Operates reliably over a temperature range from -55°C to 175°C.
- Designed with a maximum gate-source voltage of 20 V for robust control.
- Provides a forward voltage of 1.1 V for optimized conductivity.
- Compliant with RoHS standards and meets automotive AEC-Q101 certification.
Product Description
Infineon ISC019N03L5SATMA1 is a high-performance N-Channel MOSFET designed for demanding electronic applications in industrial and automotive sectors. It features a SuperSO8 5 x 6 package with 8 pins, making it suitable for surface mounting on PCBs where space and thermal efficiency are critical.
This MOSFET supports a maximum continuous drain current of 330 A and a maximum drain-source voltage of 40 V, making it ideal for power switching and conversion tasks, particularly in buck converter circuits.
The device exhibits a low maximum drain-source resistance of 1.4 milliohms and a typical gate charge of 80 nanocoulombs at gate-source voltage, enabling fast switching and minimal power loss during operation. It dissipates up to 81 W of power, supporting robust operation under heavy loads.
Operating temperatures range from -55°C to 175°C, ensuring reliable performance in harsh environments. The maximum gate-source voltage rating of 20 V and forward voltage of 1.1 V contribute to the device's efficiency and stability further.
The Infineon ISC019N03L5SATMA1 complies with RoHS environmental standards and holds the automotive AEC-Q101 qualification, making it suitable for automotive applications requiring high reliability and quality standards.
Features a SuperSO8 5 x 6 package with 8 pins for surface mounting. Maximum drain-source resistance of 1.4 mΩ ensures low conduction losses. Typical gate charge of 80 nC enables efficient fast switching. Maximum power dissipation rating of 81 W supports high thermal performance.
Wide operating temperature range from -55°C to 175°C for harsh environments. Maximum gate-source voltage rating of 20 V for robust gate control. Forward voltage of 1.1 V optimizes on-state conduction efficiency. RoHS compliant and AEC-Q101 automotive standard qualified.
This N-Channel MOSFET is well suited for industrial power management, automotive electronics, and high-performance power conversion applications. Its quality and robustness make it an essential component in electronic designs requiring reliability and efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 330 A.
It has a maximum drain-source voltage rating of 40 V.
This MOSFET features a SuperSO8 5 x 6 package with 8 pins for surface mounting.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation rating is 81 W.
It has a typical gate charge of 80 nanocoulombs at the gate-source voltage.
The maximum gate-source voltage rating is 20 V.
The maximum drain-source resistance is 1.4 milliohms.
Yes, it is compliant with RoHS standards and meets automotive AEC-Q101 certification.
This model has an N-channel type.
It is well suited for industrial power management, automotive electronics, and high-performance power conversion applications.
The country of origin for this MOSFET is India.
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