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Infineon IPZ N-Channel MOSFET 40 A 40 V 8-Pin SuperSO8 5 x 6 ISZ065N03L5SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISZ065N03L5SATMA1 |
| Mount Type | Surface |
| Series | IPZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for surface mount with SuperSO8 5 x 6 mm package dimensions.
- Low maximum drain-source resistance (Rds) of 1.4 mΩ ensures efficient conduction.
- Capable of a maximum power dissipation of 81 W and maximum operating temperature of 175°C.
- Suitable for high frequency switching applications with a typical gate charge of 80 nC at Vgs.
- Meets RoHS compliance and automotive grade AEC-Q101 standard for reliability.
- Forward voltage of 1.1 V and gate-source voltage rated at ±20 V.
- Wide operating temperature range from -55°C to 175°C enables harsh environment use.
- Optimized for buck converter topologies and high-frequency switch mode power supplies (SMPS).
Product Description
Infineon ISZ065N03L5SATMA1 is a high-performance N-Channel MOSFET designed for demanding power applications. It supports a maximum continuous drain current of 40 A and a drain-source voltage of 40 V, packaged in a compact 8-pin SuperSO8 (5 x 6 mm) surface-mount device package.
This MOSFET offers an ultra-low maximum drain-source resistance (Rds) of 1.4 mΩ, enabling efficient power conduction with minimal heat generation. It supports a maximum power dissipation of 81 W, allowing robust operation in power electronics.
The device operates reliably over a broad temperature range from -55°C to 175°C, making it ideal for automotive and industrial applications. It meets the automotive AEC-Q101 standard and is RoHS compliant, halogen-free, and free of lead plating, ensuring environmental safety.
Its typical gate charge of 80 nC at the gate-source voltage makes it suitable for high-speed switching applications, particularly optimized for buck converters and high-frequency SMPS circuits. The device's forward voltage is 1.1 V with a maximum gate-source voltage rating of ±20 V, allowing flexible integration into various power control systems.
This 8-pin MOSFET package provides excellent thermal resistance and reliable performance under demanding electrical loads. It is appropriate for use in industrial, automotive, laboratory, consumer electronics, and power management systems.
Designed for surface mount in a SuperSO8 5 x 6 mm package. Low Rds(on) of 1.4 mΩ ensures high efficiency. Power dissipation up to 81 W enables reliable operation. Wide temperature range from -55°C to 175°C for harsh environments.
Automotive grade AEC-Q101 certification. RoHS compliant, halogen-free, and lead plating free. Optimized for buck converters and SMPS applications. 8-pin configuration for optimized circuit integration.
This product is an excellent choice for engineers designing power electronics in automotive, industrial, and commercial sectors. Browse EnvMart’s extensive Electronics & Electricals category for more semiconductor devices and power MOSFETs by Infineon and other leading brands.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It is packaged in a SuperSO8 5 x 6 mm surface-mount device.
The maximum power dissipation for this MOSFET is 81 W.
The typical gate charge at Vgs is 80 nC.
The maximum gate-source voltage rating is ±20 V.
It can operate in a temperature range from -55°C to 175°C.
Yes, it meets RoHS compliance and the automotive AEC-Q101 standard.
The forward voltage of this model is 1.1 V.
This MOSFET features an N-channel configuration.
It is optimized for buck converter topologies and high-frequency switch mode power supplies (SMPS).
The country of origin for this MOSFET is India.
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