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Nexperia P-Channel Enhancement MOSFET 10.3 A, 30 V, 81 W Power Dissipation, 8-Pin MLPAK33 Surface Mount PXP011-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP011-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes advanced Trench MOSFET technology for efficient switching performance.
- Encapsulated in compact 8-pin MLPAK33 surface mount package for space-saving PCB design.
- High maximum power dissipation of 81 W ensuring reliable operation under load.
- Designed with an enhancement mode channel and low threshold voltage for high-side load switching.
- Operating temperature range from -55°C to 175°C supports harsh industrial environments.
- Maximum gate-source voltage rated at 20 V suitable for various control voltages.
- Ideal for battery management, DC-to-DC conversion, and switching circuits in electronics applications.
- Surface mount type ensures ease of automated assembly on PCBs.
Product Description
The Nexperia PXP011-20QXJ is a high-performance P-Channel enhancement mode MOSFET designed for surface mount applications. Utilizing cutting-edge Trench MOSFET technology, this device provides a low threshold voltage and excellent switching capabilities. Encapsulated in an 8-pin MLPAK33 plastic package, it is suitable for compact electronic designs where space efficiency is critical.
It features a maximum continuous drain current of 10.3 A and a drain-source voltage rating of 30 V, making it suitable for medium power applications. The device can dissipate power up to 81 W, ensuring reliable operation and high efficiency in power switching tasks.
The MOSFET operates across a wide temperature range from -55°C to 175°C, allowing it to perform reliably in demanding industrial, automotive, and commercial electronics environments. Its maximum gate-source voltage is 20 V, providing compatibility with various driver circuits.
Typical applications for the PXP011-20QXJ include high-side load switching, battery management systems, DC-to-DC converters, and switching circuits in fields such as industrial automation, power management, and consumer electronics.
Utilizes Trench MOSFET technology for improved performance. Compact 8-pin MLPAK33 surface mount package. Maximum continuous drain current of 10.3 amperes. High power dissipation of 81 watts. Wide operating temperature range from -55°C to 175°C.
Enhancement mode channel for efficient switching. Supports a maximum gate-source voltage of 20 V. Suitable for battery management and DC/DC conversion applications.
Nexperia products excel in delivering robust semiconductor solutions critical for modern electronic circuits. Explore EnvMart's comprehensive catalog for similar semiconductor components and discover optimal parts for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
The maximum drain-source voltage rating is 30 V.
It can dissipate power up to 81 W, ensuring reliable operation under load.
This model operates within a temperature range from -55°C to 175°C.
It is encapsulated in an 8-pin MLPAK33 surface mount package.
The maximum gate-source voltage is rated at 20 V.
This model uses a P-channel enhancement mode channel for efficient switching.
The maximum drain-source resistance is 13.6 mΩ.
It is suitable for applications such as battery management, DC-to-DC conversion, and high-side load switching.
The PXP011-20QXJ has a pin count of 8.
The country of origin for this model is India.
It utilizes advanced Trench MOSFET technology for efficient switching performance.
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