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Infineon OptiMOS™ N-Channel MOSFET 30 V 433 A Surface Mount 8-Pin TDSON BSC005N03LS5IATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC005N03LS5IATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 433A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.7V |
Key Features
- Features a low maximum drain source resistance of 5.5 milliohms to maximize efficiency.
- Suitable for high power dissipation up to 188 W in compact form factor.
- Operates within a wide temperature range from -55°C to 175°C.
- Typical gate charge of 51 nC supports fast switching performance.
- Maximum gate source voltage rating of 20 V for robust operation.
- Surface mount design ideal for automated PCB assembly.
- Designed to reduce overall system costs while delivering highest power density.
- Compliant with RoHS and halogen-free standards.
Product Description
Infineon BSC005N03LS5IATMA1 is an OptiMOS™ series N-Channel MOSFET designed for high power semiconductor applications. It features a robust 8-pin TDSON surface mount package optimized for high efficiency and power density with a maximum continuous drain current of 433 A and a drain source voltage of 30 V.
The device exhibits a low maximum drain source resistance of 5.5 milliohms which leads to improved conduction efficiency and reduced energy loss during operation. Its power dissipation rating is 188 W, enabling it to handle substantial thermal loads in industrial, automotive, and power management systems.
Operating temperature range from -55°C to 175°C ensures reliability in harsh environments. The MOSFET has a typical gate charge of 51 nC at Vgs for fast switching and high-frequency applications, alongside a maximum gate source voltage rating of 20 V to safeguard against voltage spikes.
Compact dimensions of 5.49 mm length, 6.35 mm width, and 1.1 mm height support compact PCB designs. The surface mount package allows efficient manufacturing and integration into power electronic circuits.
This Infineon OptiMOS™ MOSFET is RoHS compliant and halogen-free, aligning with modern environmental standards. Its benchmark solutions offer highest power density and energy efficiency for industrial, automotive, laboratory, and power management applications, contributing to reduced overall system costs.
Features a low maximum drain source resistance of 5.5 milliohms to maximize efficiency. Suitable for high power dissipation up to 188 W in compact form factor. Operates within a wide temperature range from -55°C to 175°C.
Typical gate charge of 51 nC supports fast switching performance. Maximum gate source voltage rating of 20 V for robust operation. Compact dimensions: 5.49 mm length, 6.35 mm width, 1.1 mm height. Surface mount design ideal for automated PCB assembly.
Designed to reduce overall system costs while delivering highest power density. Compliant with RoHS and halogen-free standards. Explore a wide range of Infineon semiconductor components and OptiMOS series devices on EnvMart for advanced power electronics and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 433 A.
It has a maximum drain source voltage rating of 30 V.
This MOSFET can handle a maximum power dissipation of 188 W.
The typical gate charge at Vgs is 51 nC.
It has compact dimensions of 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
The operating temperature range is from -55°C to 175°C.
It comes in an 8-pin TDSON surface mount package.
The maximum gate source voltage rating is 20 V.
The maximum drain source resistance is 5.5 milliohms.
Yes, it is RoHS compliant and halogen-free.
It is suitable for high power semiconductor applications in industrial, automotive, and power management systems.
The surface mount design is ideal for automated PCB assembly, enhancing manufacturing efficiency.
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