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Infineon P-Channel MOSFET 230A 75V 3-Pin TO-252 Surface Mount AUIRFR5305TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFR5305TR |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 230A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High continuous drain current rating of 230 amperes provides excellent performance.
- Maximum drain-source voltage of 75 volts suitable for various power electronics applications.
- Low on-resistance at 3 milliohms enhances conduction efficiency.
- Surface mount TO-252 package ensures compact PCB design compatibility.
- Operation temperature range from -55°C to 175°C supports automotive-grade environments.
- Maximum power dissipation of 81 watts allows robust thermal handling.
- Gate charge of 80 nanocoulombs at Vgs optimizes switching speed.
- Max gate-source voltage of 20 volts prevents gate damage.
Product Description
Infineon AUIRFR5305TR is a high-performance P-channel MOSFET designed for automotive and industrial power management applications. Featuring a cellular planar design and HEXFET® technology, this device offers low on-resistance per silicon area, making it suitable for high current switching and power conversion tasks.
The MOSFET is rated for a maximum continuous drain current of 230 A and a drain-source voltage of 75 V, housed in a compact 3-pin TO-252 surface mount package. It provides robust operation within a temperature range of -55°C to 175°C, complying with the stringent requirements of automotive environments through AEC-Q101 certification.
This device supports high efficiency with a low Rds(on) of 3 milliohms and a maximum power dissipation of 81 watts, making it ideal for demanding automotive electronic systems, power converters, and motor drives. Its gate charge of 80 nC and maximum gate-source voltage of 20 V enable fast switching performance while protecting device integrity.
Infineon ensures the MOSFET design conforms to RoHS directives, ensuring environmental compliance for production and use. High continuous drain current rating of 230 amperes. Maximum drain-source voltage suitable for 75 volts applications.
Compact TO-252 three-pin surface mount package. Wide operating temperature range from -55°C to 175°C. Low on-resistance of 3 milliohms for minimal conduction losses. Maximum power dissipation of 81 watts for effective heat management.
Optimized gate charge at 80 nanocoulombs for efficiency. Reliable automotive-grade performance compliant with AEC-Q101. RoHS compliant manufacturing process.
This MOSFET is well-suited to automotive electronic circuits, power supply systems, motor control applications, and industrial power conversion where durability and reliability are critical. For electronics manufacturers seeking quality semiconductor components, this Infineon MOSFET represents a robust solution.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 230 amperes, allowing it to handle high current applications effectively.
This MOSFET has a maximum drain-source voltage of 75 volts, making it suitable for various power electronics applications.
The on-resistance of this model is 3 milliohms, which enhances conduction efficiency and reduces power losses.
It operates within a temperature range of -55°C to 175°C, supporting automotive-grade environments.
The maximum power dissipation for this MOSFET is 81 watts, allowing for effective thermal management in applications.
This model is housed in a compact 3-pin TO-252 surface mount package, ensuring compatibility with compact PCB designs.
The gate charge is 80 nanocoulombs at Vgs, which optimizes switching speed for efficient operation.
It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The maximum gate-source voltage is 20 volts, which helps prevent gate damage during operation.
Yes, the manufacturing process of this device complies with RoHS directives, ensuring environmental compliance.
This MOSFET is suitable for automotive electronic circuits, power supply systems, motor control applications, and industrial power conversion.
The country of origin for this MOSFET is India, reflecting its manufacturing location.
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