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Infineon P-Channel MOSFET, 1.9 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode ISP25DP06NMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISP25DP06NMXTSA1 |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device features an enhancement channel mode ensuring reliable switching performance.
- It is housed in a compact 3-pin SOT-223 package suitable for PCB mounting.
- The MOSFET operates within a wide temperature range from -55°C to 175°C for versatility.
- Typical gate charge at Vgs is 80 nC supporting efficient gate drive control.
- Maximum power dissipation is rated at 81 W, providing robustness in demanding conditions.
- The product complies with RoHS standards and automotive standard AEC-Q101 for quality assurance.
- Its low drain-source resistance of 1.7 mΩ supports minimal conduction losses.
- Forward voltage drop is 1.1 V, aiding in energy efficient circuit design.
Product Description
Infineon ISP25DP06NMXTSA1 is a high-performance P-Channel MOSFET intended for discrete semiconductor applications in electronics and electrical engineering sectors. This device features a maximum continuous drain current of 1.9 A and can withstand drain-source voltages up to 60 V, making it suitable for power switching and load driving tasks.
Its enhancement mode channel provides reliable switching with low on-resistance of only 1.7 mΩ, reducing power loss during conduction. The compact 3-pin SOT-223 surface mount package ensures easy integration on printed circuit boards in industrial, automotive, and commercial electronic devices.
The MOSFET supports gate voltages up to ±20 V with typical gate charge of 80 nC, which enables efficient switching speeds and minimizes switching losses. Operating temperature range from -55°C to 175°C allows the component to perform reliably in harsh environments, including automotive applications certified by AEC-Q101 standards.
The surface mount SOT-223 package is suitable for high-density applications. Low forward voltage drop enhances energy efficiency of circuits. Designed for fast switching, the device supports avalanche ruggedness to withstand voltage spikes.
It is RoHS compliant, ensuring environmental friendliness and regulatory compliance. Typical use cases include power management, load switching, and automotive electronic control units. This MOSFET is valuable for industrial, automotive, and electronics manufacturing sectors where robust, reliable switching devices are necessary.
EnvMart customers seeking durable and efficient discrete semiconductor components will find the Infineon ISP25DP06NMXTSA1 an ideal choice within our Electronics category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
It can withstand a maximum drain-source voltage of 60 V.
The typical gate charge at Vgs is 80 nC, which supports efficient gate drive control.
This MOSFET operates within a temperature range from -55°C to 175°C.
It is housed in a compact 3-pin SOT-223 package suitable for surface mounting on PCBs.
The maximum power dissipation is rated at 81 W, allowing it to perform in demanding conditions.
The forward voltage drop is 1.1 V, which aids in energy-efficient circuit design.
This model complies with RoHS standards and the automotive standard AEC-Q101 for quality assurance.
The low drain-source resistance is rated at 1.7 mΩ, which helps reduce conduction losses.
It is suitable for power management, load switching, and automotive electronic control units.
The maximum gate-source voltage is ±20 V, enabling efficient switching speeds.
This model features an enhancement mode channel, ensuring reliable switching performance.
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