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DiodesZetex P-Channel MOSFET Type P 230 mA 45 V Enhancement Mode 3-Pin E-Line BS250P
Specifications
| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | BS250P |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | BS250P |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 230mA |
| Maximum Drain Source Voltage Vds | 45V |
| Maximum Drain Source Resistance Rds | 14Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Maximum continuous drain current of 230 mA ensures low power dissipation applications.
- Designed with a maximum drain-source voltage of 45 V for stable operation.
- Features an enhancement mode channel and low resistance of 14 ohms maximum.
- Package type is E-Line with a through-hole mount for easy PCB integration.
- Operating temperature range spans from -55°C to +150°C for diverse environmental conditions.
- Maximum power dissipation is 700 mW suitable for low-power semiconductor circuits.
- Compliance with automotive AEC-Q101 standard ensures reliability in demanding applications.
- Maximum gate-source voltage of symmetrical -20 V to +20 V for flexible gate drive signals.
Product Description
DiodesZetex BS250P is a P-Channel MOSFET transistor designed for efficient semiconductor switching applications. It features a Type P channel, supporting a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 45 V. This enhancement mode device has a low drain source resistance of 14 ohms maximum, optimizing power efficiency and signal integrity.
The transistor is housed in a 3-pin E-Line package suitable for through-hole PCB mounting, facilitating reliable electrical connections. It is engineered to operate over a wide temperature range from -55°C to 150°C, making it adaptable to industrial, automotive, and laboratory environments.
With a maximum power dissipation rating of 700 mW, this device is suitable for low-power applications requiring stable and efficient switching. The compliance with the automotive AEC-Q101 standard highlights its ruggedness and suitability for automotive electronic circuits.
Physical dimensions of the transistor are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height, offering a compact form factor for densely packed circuit designs. The maximum gate-source voltage tolerance of ±20 V allows for flexible drive control in various circuit configurations.
Maximum continuous drain current of 230 mA. Maximum drain-source voltage of 45 V. Enhancement mode P-Channel MOSFET. E-Line package with 3 pins for through-hole mounting. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation rating of 700 mW. Meets automotive AEC-Q101 standard for reliability. Compact physical dimensions: 4.77 mm x 2.41 mm x 4.01 mm. Maximum symmetrical gate-source voltage of ±20 V.
This MOSFET is ideal for applications in consumer electronics, automotive control circuits, and industrial machinery. The combination of reliable performance and automotive-grade certification makes it suitable for demanding semiconductor switching roles in diverse environments.
For further exploration of semiconductor components, including MOSFETs, browse the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 230 mA, suitable for low power dissipation applications.
It has a maximum drain-source voltage of 45 V, ensuring stable operation in various applications.
The operating temperature range spans from -55°C to 150°C, making it suitable for diverse environmental conditions.
This model comes in an E-Line package with a through-hole mount, facilitating easy integration into PCBs.
The maximum power dissipation rating is 700 mW, suitable for low-power semiconductor circuits.
The maximum gate-source voltage is ±20 V, allowing for flexible gate drive signals in various circuit configurations.
The physical dimensions are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.
It features a Type P channel, which is characteristic of enhancement mode devices.
This model complies with the automotive AEC-Q101 standard, ensuring reliability in demanding applications.
The maximum drain-source resistance is 14 ohms, optimizing power efficiency and signal integrity.
This MOSFET has a pin count of 3, designed for through-hole mounting.
The BS250P is manufactured in Germany, contributing to its quality and reliability.
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