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Vishay N-Channel MOSFET 15 A, 800 V Enhancement, TO-263 Package, 3-Pin SIHB17N80E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 15.88mm |
| Length | 10.67mm |
| Model | SIHB17N80E-GE3 |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | SiHB17N80E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 122nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current of 15 amperes ensures reliable performance.
- Maximum drain-source voltage of 800 volts suitable for high-voltage switching applications.
- Enhancement-mode channel with an N-type channel design.
- Compact 3-pin TO-263 surface-mount package for easy PCB integration.
- Low drain-source resistance (Rds) of 290 milliohms for efficient operation.
- High maximum power dissipation up to 208 watts supports demanding loads.
- Wide operating temperature range from -55°C to 150°C for versatile environmental conditions.
- Maximum gate-source voltage rating of 30 volts allows flexible gate drive options.
Product Description
The Vishay SIHB17N80E-GE3 is a high-performance N-Channel MOSFET designed for efficient power switching applications. Featuring a maximum continuous drain current of 15 A and a drain-source voltage rating of 800 V, it supports robust operation in various industrial and electronic circuits.
This device is housed in a compact TO-263 package with 3 pins and surface mount construction, offering ease of integration on circuit boards. Its enhancement-mode channel provides reliable switching control with a low on-resistance of 290 milliohms, improving efficiency and reducing power losses during operation.
The SIHB17N80E-GE3 supports a maximum power dissipation of 208 W, enabling it to manage substantial power loads safely when adequate heat sinking is provided. The product's temperature tolerance ranges from -55°C to 150°C, making it suitable for use in harsh environments including industrial automation, power supplies, motor drives, and renewable energy systems.
High maximum continuous drain current of 15 amperes ensures reliable performance. Maximum drain-source voltage of 800 volts suitable for high-voltage switching applications. Enhancement-mode channel with an N-type channel design.
Compact 3-pin TO-263 surface-mount package for easy PCB integration. Low drain-source resistance (Rds) of 290 milliohms for efficient operation. High maximum power dissipation up to 208 watts supports demanding loads. Wide operating temperature range from -55°C to 150°C for versatile environmental conditions.
Maximum gate-source voltage rating of 30 volts allows flexible gate drive options.
The Vishay SIHB17N80E-GE3 N-Channel MOSFET is widely used in industrial electronic design, construction of reliable power switching circuits, HVAC systems, manufacturing machinery control, and other applications demanding rugged, efficient semiconductor switching solutions.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SIHB17N80E-GE3 is 15 amperes.
This model has a maximum drain-source voltage rating of 800 volts, making it suitable for high-voltage switching applications.
The drain-source resistance (Rds) of this MOSFET is 290 milliohms, which contributes to efficient operation.
It supports a maximum power dissipation of up to 208 watts, allowing it to manage substantial power loads effectively.
The dimensions of the TO-263 package are 15.88 mm in height, 10.67 mm in length, and 4.83 mm in width.
The SIHB17N80E-GE3 operates within a temperature range of -55°C to 150°C, making it suitable for various environmental conditions.
It features an enhancement-mode N-channel design, which is typical for efficient switching applications.
The maximum gate-source voltage rating for this model is 30 volts, allowing for flexible gate drive options.
This MOSFET has a total of 3 pins, designed for surface mounting.
It is widely used in industrial electronic design, power supplies, motor drives, and renewable energy systems.
The typical gate charge (Qg) at a gate-source voltage is 122 nC.
The country of origin for this MOSFET is India.
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