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Vishay N-Channel MOSFET 100 A, 60 V Enhancement, 3-Pin TO-263 SQM50034E_GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.57mm
Length 10.41mm
Model SQM50034E_GE3
Width 9.65mm
Mount Type PCB
Series SQM50034E
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.0039Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • This MOSFET supports a maximum power dissipation of 150 W.
  • The maximum drain-source resistance (Rds) is 0.0039 Ω, enabling low conduction losses.
  • It operates within a temperature range of -55°C to 175°C.
  • The device has a typical gate charge of 58 nC at Vgs of 5 V.
  • The maximum gate-source voltage allowed is 20 V to protect the device gate.
  • This MOSFET meets the automotive-grade AEC-Q101 standard ensuring reliability.

Product Description

Vishay SQM50034E_GE3 N-Channel MOSFET is a high-performance discrete semiconductor component intended for electronic and power applications. It supports a maximum continuous drain current of 100 A and can handle a maximum drain-source voltage of 60 V, making it suitable for power switching and amplification in automotive and industrial systems.

The MOSFET is housed in a TO-263 package designed for PCB mounting, which provides low thermal resistance and efficient heat dissipation. This enhancement mode device features a low maximum drain-source resistance of 0.0039 Ω, ensuring minimal power loss during operation. It also offers a maximum power dissipation capacity of 150 W, suitable for demanding thermal environments.

Designed to operate reliably across a broad temperature range from -55°C to 175°C, the SQM50034E_GE3 is compliant with the automotive AEC-Q101 quality standard, indicating its suitability for automotive system electronics requiring high reliability and durability.

Typical gate charge of 58 nC at a gate voltage of 5 V enables efficient switching performance, while the maximum gate-source voltage rating of 20 V protects the gate oxide from damage. The compact dimensions (4.57 mm height, 10.41 mm length, and 9.65 mm width) facilitate integration into space-constrained circuit designs.

This MOSFET is ideal for use in automotive power modules, industrial motor controls, power converters, and other high-current, high-efficiency electronic applications. It integrates quality semiconductor technology from Vishay, a trusted brand for power electronics components.

This MOSFET supports a maximum power dissipation of 150 W. The maximum drain-source resistance (Rds) is 0.0039 Ω, enabling low conduction losses. It operates within a wide temperature range from -55°C to 175°C. The device has a typical gate charge of 58 nC at Vgs of 5 V.

The maximum gate-source voltage allowed is 20 V to protect the gate. Compact size with dimensions 10.41 mm by 9.65 mm by 4.57 mm. Automotive-grade quality certified by AEC-Q101. Explore Vishay products and high-quality MOSFETs at EnvMart for reliable electronic component sourcing.

Vishay N-Channel MOSFET 100 A, 60 V Enhancement, 3-Pin TO-263 SQM50034E_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A.

It can handle a maximum drain-source voltage of 60 V.

The maximum power dissipation capacity is 150 W.

The maximum drain-source resistance (Rds) is 0.0039 Ω.

The typical gate charge at Vgs of 5 V is 58 nC.

It operates within a temperature range of -55°C to 175°C.

The maximum gate-source voltage allowed is 20 V.

The dimensions are 10.41 mm in length, 9.65 mm in width, and 4.57 mm in height.

This MOSFET is housed in a TO-263 package type.

It complies with the automotive-grade AEC-Q101 standard.

This model is designed for PCB mounting.

This MOSFET has 3 pins.

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