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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SQM50034E_GE3 |
| Width | 9.65mm |
| Mount Type | PCB |
| Series | SQM50034E |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.0039Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Vishay SQM50034E_GE3 N-Channel MOSFET is a high-performance discrete semiconductor component intended for electronic and power applications. It supports a maximum continuous drain current of 100 A and can handle a maximum drain-source voltage of 60 V, making it suitable for power switching and amplification in automotive and industrial systems.
The MOSFET is housed in a TO-263 package designed for PCB mounting, which provides low thermal resistance and efficient heat dissipation. This enhancement mode device features a low maximum drain-source resistance of 0.0039 Ω, ensuring minimal power loss during operation. It also offers a maximum power dissipation capacity of 150 W, suitable for demanding thermal environments.
Designed to operate reliably across a broad temperature range from -55°C to 175°C, the SQM50034E_GE3 is compliant with the automotive AEC-Q101 quality standard, indicating its suitability for automotive system electronics requiring high reliability and durability.
Typical gate charge of 58 nC at a gate voltage of 5 V enables efficient switching performance, while the maximum gate-source voltage rating of 20 V protects the gate oxide from damage. The compact dimensions (4.57 mm height, 10.41 mm length, and 9.65 mm width) facilitate integration into space-constrained circuit designs.
This MOSFET is ideal for use in automotive power modules, industrial motor controls, power converters, and other high-current, high-efficiency electronic applications. It integrates quality semiconductor technology from Vishay, a trusted brand for power electronics components.
This MOSFET supports a maximum power dissipation of 150 W. The maximum drain-source resistance (Rds) is 0.0039 Ω, enabling low conduction losses. It operates within a wide temperature range from -55°C to 175°C. The device has a typical gate charge of 58 nC at Vgs of 5 V.
The maximum gate-source voltage allowed is 20 V to protect the gate. Compact size with dimensions 10.41 mm by 9.65 mm by 4.57 mm. Automotive-grade quality certified by AEC-Q101. Explore Vishay products and high-quality MOSFETs at EnvMart for reliable electronic component sourcing.
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