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onsemi N-Channel Power MOSFET 30 A 650 V Enhancement Mode 3-Pin TO-263 NTB110N65S3HF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.58mm |
| Length | 10.67mm |
| Model | NTB110N65S3HF |
| Width | 9.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 240W |
| Typical Gate Charge Qg @ Vgs | 62nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features a low on-resistance of 110 milliohms for efficient conduction.
- Supports a maximum gate-source voltage of 30 V for reliable control.
- Typical gate charge is 62 nC, enabling faster switching speeds.
- Maximum power dissipation rating of 240 W allows for robust operation.
- Operates reliably between -55°C and 150°C temperature range.
- Superjunction technology minimizes conduction losses and improves efficiency.
- Optimized body diode for enhanced reverse recovery performance.
- Ideal for telecommunications, industrial systems, and power applications.
Product Description
onsemi NTB110N65S3HF is a high-voltage N-Channel Power MOSFET featuring a maximum continuous drain current of 30 A and a drain-source voltage rating of 650 V, housed in a 3-pin TO-263 surface-mount package. Designed with advanced SuperFET III superjunction technology, it delivers low on-resistance and low gate charge, minimizing conduction losses and improving switching efficiency.
The device’s typical gate charge of 62 nC and optimized capacitance help reduce switching loss, making it suitable for high-frequency power applications. The MOSFET is rated for maximum power dissipation of 240 W and is capable of operating in extreme temperature conditions from -55°C to +150°C.
This MOSFET is particularly useful in telecommunication power systems, cloud computing power supplies, industrial power management, server power, electric vehicle charging, and solar or UPS applications. Its robust body diode with low reverse recovery charge enhances system reliability and reduces component count.
Low typical RDS(on) of 110 milliohms allows for efficient power conversion. High maximum gate-source voltage of 30 V supports reliable switching control. Compact TO-263 package enables surface mounting in space-constrained designs.
Wide operating temperature range ensures durability under harsh conditions. Optimized reverse recovery characteristics improve system efficiency. Applications include telecommunications, industrial power supplies, and renewable energy systems.
This onsemi MOSFET provides a reliable solution for power electronics requiring high efficiency and thermal robustness. Explore related products and components within the MOSFET category at EnvMart to find complementary devices and accessories.
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Frequently Asked Questions
The maximum continuous drain current for the onsemi NTB110N65S3HF is 30 A.
This model has a maximum drain-source voltage rating of 650 V.
The typical gate charge for the NTB110N65S3HF is 62 nC, which helps in achieving faster switching speeds.
It features a low on-resistance of 110 milliohms, contributing to efficient conduction.
The maximum power dissipation rating is 240 W, allowing for robust operation.
This model operates reliably within a temperature range of -55°C to 150°C.
The MOSFET is housed in a 3-pin TO-263 surface-mount package.
The dimensions of the NTB110N65S3HF are 10.67 mm in length, 9.65 mm in width, and 4.58 mm in height.
The maximum gate-source voltage supported by this MOSFET is 30 V.
It is suitable for telecommunications, industrial power systems, and renewable energy applications.
This model features an N-channel design, which is typical for enhancement mode MOSFETs.
The NTB110N65S3HF utilizes SuperFET III superjunction technology to minimize conduction losses and improve efficiency.
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