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DiodesZetex P-Channel MOSFET 150 A, 20 V, Enhancement Mode, 8-Pin PowerDI5060 Package DMP2003UPS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.05mm |
| Length | 6mm |
| Model | DMP2003UPS-13 |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 80W |
| Typical Gate Charge Qg @ Vgs | 177nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -1.1V |
Key Features
- Supports continuous drain current up to 150 A for demanding loads.
- Operates at a maximum drain-source voltage of 20 V, suitable for low-voltage circuits.
- Features enhancement mode with a surface mount PowerDI5060 package for efficient thermal management.
- Equipped with 8 pins, enabling robust electrical and thermal connections.
- Low drain-source resistance of 4 milliohms minimizes on-state power losses.
- Handles power dissipation up to 80 W, ensuring reliability under high load.
- Wide operating temperature range from -55°C to 150°C allows use in harsh environments.
- Incorporates automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 for quality assurance.
Product Description
The DiodesZetex DMP2003UPS-13 is a high-performance P-Channel MOSFET engineered for low voltage and high current applications. With a maximum continuous drain current of 150 A and a drain-source voltage limit of 20 V, this device is ideal for power management circuits, including notebook battery power management and load switching applications that require efficient switching and low conduction losses.
Its 8-pin PowerDI5060 surface mount package enhances thermal efficiency, facilitating cooler running even under substantial loads. The device features a low on-resistance (Rds) of 4 milliohms, optimizing power conversion efficiency and minimizing energy loss during operation.
Designed to operate across a broad temperature range from -55°C up to 150°C, the MOSFET meets rigorous automotive industry standards including AEC-Q100, AEC-Q101, and AEC-Q200, assuring reliability in demanding environments. The compact physical footprint with dimensions of 6 mm length, 5.1 mm width, and 1.05 mm height allows for versatile PCB integration without sacrificing performance.
Supports continuous drain current up to 150 A. Operates at a maximum drain-source voltage of 20 V. Enhancement mode for precise switching control. Surface mount PowerDI5060 package for improved thermal performance. Maximum power dissipation rating of 80 W.
Wide operational temperatures from -55°C to 150°C. Low typical gate charge of 177 nC for fast switching. Automotive standard certified (AEC-Q100, AEC-Q101, AEC-Q200). Compact dimensions facilitate flexible PCB design.
This MOSFET is suitable for industrial electronic uses including power management in portable electronics, automotive electronics, and other high-efficiency power conversion systems. Its combination of high current capability, low resistance, and robust packaging ensures reliable performance in challenging electrical and thermal conditions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A, making it suitable for demanding load applications.
This MOSFET operates at a maximum drain-source voltage of 20 V, which is appropriate for low-voltage circuits.
It comes in a surface mount PowerDI5060 package, which enhances thermal management.
The device features a low on-resistance of 4 milliohms, which minimizes on-state power losses.
The maximum power dissipation rating for this MOSFET is 80 W, ensuring reliable performance under high load conditions.
It operates across a wide temperature range from -55°C to 150°C, allowing use in harsh environments.
This model is equipped with 8 pins, enabling robust electrical and thermal connections.
It incorporates automotive standards AEC-Q100, AEC-Q101, and AEC-Q200 for quality assurance.
The typical gate charge is 177 nC, which facilitates fast switching performance.
The dimensions of this MOSFET are 6 mm in length, 5.1 mm in width, and 1.05 mm in height.
This model features a P-channel type, designed for enhancement mode operation.
It is suitable for power management in portable electronics, automotive electronics, and other high-efficiency power conversion systems.
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