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DiodesZetex N-Channel MOSFET 150 A 40 V Enhancement Mode 3-Pin TO-220 DMNH4005SCT
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.82mm |
| Length | 10.66mm |
| Model | DMNH4005SCT |
| Width | 9.01mm |
| Mount Type | Through Hole |
| Series | DMN |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features enhancement mode operation for efficient switching.
- It has a low maximum drain source resistance of 4 mΩ for high performance.
- The device supports a maximum power dissipation of 165 W.
- Operates within a temperature range of -55°C to 175°C for robust reliability.
- Typical gate charge is 48 nC at Vgs providing fast switching capability.
- Complies with the automotive standard AEC-Q101.
- Its 3-pin through-hole package allows easy mounting in electronic circuits.
Product Description
DiodesZetex DMNH4005SCT is a high-performance N-Channel Enhancement Mode MOSFET designed for robust power switching applications. With a maximum continuous drain current of 150 A and a drain-source voltage rating of 40 V, this MOSFET fits demanding applications requiring efficient power control within a compact TO-220 through-hole package.
The device is engineered with a low maximum drain-source resistance (4 mΩ), minimizing conduction losses and improving energy efficiency in power circuits. It supports a maximum power dissipation of 165 W, enabling it to handle high power loads reliably.
Its operating temperature range spans from -55°C to 175°C, making it suitable for industrial, automotive, and consumer electronics environments. The typical gate charge of 48 nC at a gate-source voltage of 20 V allows for rapid switching transitions, ideal for high-frequency power devices.
The MOSFET package comprises 3 pins arranged for through-hole mounting, facilitating easy installation into PCBs. Compact package dimensions - length of 10.66 mm, width of 9.01 mm, and height of 4.82 mm - allow for space-efficient designs.
Enhancement mode N-Channel MOSFET with 150 A current capability. Maximum drain-source voltage of 40 V for moderate voltage applications. Low on-resistance of 4 mΩ reduces power loss. Thermally robust, with power dissipation rating of 165 W.
Wide operating temperature from -55°C to 175°C ensures reliability. Typical gate charge of 48 nC supports fast switching performance. Complies with AEC-Q101 automotive standard for quality assurance. Compact TO-220 through-hole package for ease of PCB integration.
This MOSFET is ideal for use in power management, motor control, DC-DC converters, and other industrial and automotive electronics applications. Its compliance with automotive standards also makes it suitable for vehicle control modules and powertrain systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at a gate-source voltage of 20 V is 48 nC.
It supports a maximum power dissipation of 165 W.
The operating temperature range spans from -55°C to 175°C.
This model comes in a TO-220 package type and is designed for through-hole mounting.
The maximum drain-source resistance is 4 mΩ.
It complies with the AEC-Q101 automotive standard.
The dimensions are 10.66 mm in length, 9.01 mm in width, and 4.82 mm in height.
This model utilizes an N-channel type configuration.
It is suitable for power management, motor control, DC-DC converters, and automotive electronics applications.
This MOSFET has a total of 3 pins.
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