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Toshiba U-MOSVIII-H N-Channel MOSFET Transistor 32A 30V 8-Pin SOP Surface Mount TPH11003NL,LQ(S)

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Toshiba U-MOSVIII-H N-Channel MOSFET Transistor 32A 30V 8-Pin SOP Surface Mount TPH11003NL,LQ(S)

Name: Toshiba U-MOSVIII-H N-Channel MOSFET Transistor 32A 30V 8-Pin SOP Surface Mount TPH11003NL,LQ(S)
Brand: Toshiba
SKU: 301484
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	950μm
Length	5mm
Model	TPH11003NL,LQ(S
Width	5mm
Mount Type	Surface
Series	U-MOSVIII-H
Maximum Operating Temperature	150°C
Package Type	SOP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	32A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	16mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	21W
Typical Gate Charge Qg @ Vgs	7.5nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET is part of the U-MOSVIII-H series known for high efficiency.
It features an enhancement mode channel type optimized for switching applications.
Maximum power dissipation is rated at 21 watts for robust thermal handling.
Typical gate charge is low at 7.5 nanocoulombs to minimize switching losses.
Dedicated for surface mounting, it ensures compact, reliable PCB assembly.
Operating temperature ranges from -55°C to 150°C for demanding environments.
Forward voltage drop is approximately 1.2 volts, aiding in efficient conduction.
Maximum gate-source voltage tolerance is -20 to +20 volts for versatile gate drive options.

Product Description

Toshiba TPH11003NL,LQ(S N-Channel MOSFET Transistor is a high-performance semiconductor device engineered for power switching and amplification in electronic circuits. This MOSFET belongs to the U-MOSVIII-H series, recognized for superior efficiency and low power loss across varied operating conditions.

The device supports a maximum continuous drain current of 32 amperes and can handle drain-source voltages up to 30 volts, making it suitable for power management tasks in industrial, automotive, and consumer electronics applications.

Featuring an 8-pin SOP (Small Outline Package) surface mount design, it facilitates compact PCB layouts and automated assembly processes. Its enhancement mode operation and low drain-source resistance of 16 milliohms contribute to efficient switching characteristics and reduced heat generation.

The transistor tolerates gate-source voltages ranging from -20 to +20 volts and exhibits a typical gate charge of 7.5 nanocoulombs, which enables fast switching speeds and reduced driving power requirements.

It operates reliably within a temperature range from -55°C to 150°C, accommodating diverse ambient environments encountered in industrial and automotive sectors. Physical dimensions include a 5 mm length and width, with a package height of 950 micrometers, enabling space-efficient designs.

The Toshiba TPH11003NL,LQ(S is manufactured in Japan, ensuring adherence to strict quality standards and reliability. This MOSFET is part of Toshiba's U-MOSVIII-H series optimized for low-loss power switching. Application areas include industrial electronics, automotive systems, power supplies, and consumer electronic devices.

Its robust power handling and thermal management support demanding operational conditions. The surface-mount configuration eases integration into automated manufacturing workflows. The device complies with no specific standards or automotive certifications but represents solid general-purpose MOSFET use.

Explore related semiconductor components and discrete MOSFETs in EnvMart’s Electronics & Electricals category for your power management solution needs.